{"title":"溅射沉积TiO2薄膜电阻跃迁对电极材料的敏感性","authors":"N. Kawashima, Shingo Sato, Y. Omura","doi":"10.1109/IMFEDK.2016.7521687","DOIUrl":null,"url":null,"abstract":"This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sensitivity of resistive transition of sputter-deposited TiO2 films to electrode material\",\"authors\":\"N. Kawashima, Shingo Sato, Y. Omura\",\"doi\":\"10.1109/IMFEDK.2016.7521687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.\",\"PeriodicalId\":293371,\"journal\":{\"name\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"79 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2016.7521687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sensitivity of resistive transition of sputter-deposited TiO2 films to electrode material
This paper discusses the influence of top-electrode (TE) and bottom-electrode (BE) materials on the resistive transition of sputter-deposited TiO2 films. The electronic characteristics of the TiO2 films are elucidated from the physical mechanism of resistive transition.