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2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)最新文献

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A 0.5–3.5GHz wideband CMOS LNA for LTE application 用于LTE应用的0.5-3.5GHz宽带CMOS LNA
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521677
Wei-Rern Liao, Jeng-Rern Yang
{"title":"A 0.5–3.5GHz wideband CMOS LNA for LTE application","authors":"Wei-Rern Liao, Jeng-Rern Yang","doi":"10.1109/IMFEDK.2016.7521677","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521677","url":null,"abstract":"This paper presents a 0.5-3.5GHz wideband CMOS low noise amplifier (LNA) for LTE application. The LNA design is based on a common source (CS) cascade amplifier with resistive feedback that is used to do input matching and reduce the noise figure. Source follower and LC series resonances are used to do output matching. The LNA achieves the gain of 17dB ~ 22dB, a noise figure (NF) of 2.23 ~ 2.68 dB at frequency from 0.5 to 3.5 GHz, The DC power consumption is 32.8mW at 1.8 V supply voltage. The LNA is fabricated with TSMC 0.18-μm CMOS process. The chip size is 0.6mm*0.8mm.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126436515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Magnetoresistance effect of Ga-Sn-O thin-film device Ga-Sn-O薄膜器件的磁阻效应
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521685
Asuka Fukawa, Kota Imanishi, S. Miyamura, T. Matsuda, M. Kimura
{"title":"Magnetoresistance effect of Ga-Sn-O thin-film device","authors":"Asuka Fukawa, Kota Imanishi, S. Miyamura, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521685","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521685","url":null,"abstract":"We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random potential and Anderson localization with oxygen. Finally, in the case of some special condition, extremely large MR effect is obtained. Further discussion is needed to clarify the mechanism of this large MR effect.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131067706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Estimation of junction temperature at failure of SiC DMOSFETs in UIS test UIS测试中SiC dmosfet失效时结温的估计
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521700
Y. Nanen, M. Aketa, H. Asahara, T. Nakamura
{"title":"Estimation of junction temperature at failure of SiC DMOSFETs in UIS test","authors":"Y. Nanen, M. Aketa, H. Asahara, T. Nakamura","doi":"10.1109/IMFEDK.2016.7521700","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521700","url":null,"abstract":"Junction temperature of SiC DMOSFETs at device failure in unclamped inductive switching test has been estimated to be 960 K, and mechanism of the avalanche failure was discussed. The junction temperature was estimated from the extrapolation of temperature dependence of avalanche voltage. The estimated junction temperature was too low for SiC to behave as an intrinsic semiconductor, which suggests the failure occurred not in semiconductor, but in other materials such as oxides and electrode metals.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"25 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123159202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
High resolution silicon MEMS tactile sensors for measurement of fingertip sensation 用于测量指尖感觉的高分辨率硅MEMS触觉传感器
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521702
H. Takao
{"title":"High resolution silicon MEMS tactile sensors for measurement of fingertip sensation","authors":"H. Takao","doi":"10.1109/IMFEDK.2016.7521702","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521702","url":null,"abstract":"In this paper, novel semiconductor silicon based MEMS tactile sensors for measurement of fingertip sensation and their high resolution detection ability of surface texture are presented. All the device structure is made from silicon single crystal layer on SOI wafer. Two-axis movements of needle-like contactor tip are independently detected by the two independent suspensions. The movement is precisely detected by integrated strain detection circuits. Obtained results from the sensors were carefully analyzed with statistical analysis and FFT, and various objective facts have been made clear. For example, the rougher the feel texture of a paper surface, the lower the mutual relation between the time-domain waveform of surface micro roughness and the corresponding instantaneous frictional force. This is an example of never known knowledge about surface feel of touch, and a lot of information to quantify the sense of touch has been extracted using the tactile sensor in this study.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"637 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123345575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Detection and characterization of single MOS interface traps by the charge pumping method 用电荷泵送法检测和表征单MOS界面陷阱
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521662
T. Tsuchiya
{"title":"Detection and characterization of single MOS interface traps by the charge pumping method","authors":"T. Tsuchiya","doi":"10.1109/IMFEDK.2016.7521662","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521662","url":null,"abstract":"We made systematic measurements of the maximum charge pumping current from single MOS interface traps, and found that two energy levels are formed per trap, and the current shows various values of 0~2fq (f: the gate pulse frequency, q: the electron charge), depending upon the two energy levels. Moreover, we demonstrated fundamental trap counting, and found that the variability in the actual number of traps is quite large.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116865628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions b基n+-n Ge/4H-SiC异质结的电学特性
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521688
S. Morita, T. Nishimura, J. Liang, N. Shigekawa
{"title":"Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions","authors":"S. Morita, T. Nishimura, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2016.7521688","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521688","url":null,"abstract":"n+-Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) measurements. The band diagram of heterojunctions was estimated based on the C-V characteristics.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121550799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heterogeneous integration of SiGe/Ge and III–V on Si for CMOS photonics CMOS光子学中SiGe/Ge和III-V在Si上的非均匀集成
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521663
M. Takenaka, S. Takagi
{"title":"Heterogeneous integration of SiGe/Ge and III–V on Si for CMOS photonics","authors":"M. Takenaka, S. Takagi","doi":"10.1109/IMFEDK.2016.7521663","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521663","url":null,"abstract":"We have investigated CMOS photonics based on heterogeneous integration of SiGe/Ge and III-V semiconductors on Si, which gives us opportunities to enhance functionalities of Si photonics through their superior material properties for electronic-photonics integrated circuits.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123785162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Stimulus performance of poly-Si thin-film transistor in in-vitro experiment for artificial retinas 多晶硅薄膜晶体管对人工视网膜的体外刺激性能实验
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521672
Keisuke Tomioka, Shota Haruki, T. Matsuda, M. Kimura
{"title":"Stimulus performance of poly-Si thin-film transistor in in-vitro experiment for artificial retinas","authors":"Keisuke Tomioka, Shota Haruki, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521672","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521672","url":null,"abstract":"We are developing artificial retinas using poly-Si thin-film transistors (TFTs), which is suitable for the epiretinal implant on the curved human eyeballs. In this study, we confirmed stimulus performance of poly-Si TFTs in in-vitro experiment for artificial retinas. It is found that correct output waveforms are observed using a CMOS inverter and ring oscillator. This means the stimulus performance of the poly-Si TFTs is sufficient for arftificial retinas.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123616824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High quality free-standing GaN substrates and their application to high breakdown voltage GaN p-n diodes 高质量独立式GaN衬底及其在高击穿电压GaN p-n二极管中的应用
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521696
H. Ohta, Tohru Nakamura, T. Mishima
{"title":"High quality free-standing GaN substrates and their application to high breakdown voltage GaN p-n diodes","authors":"H. Ohta, Tohru Nakamura, T. Mishima","doi":"10.1109/IMFEDK.2016.7521696","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521696","url":null,"abstract":"Recent development in GaN free-standing substrates have enabled fabrications of high performance vertical structure GaN devices. This letter reviews fabrication method of the high quality GaN substrates and reports increased breakdown voltages in vertical GaN p-n diodes fabricated on the substrates. By applying multiple lightly Si doped n-GaN drift layers to the p-n diode, record breakdown voltages (VB) of 4.7 kV combined with low specific differential on-resistance (Ron) of 1.7 mΩcm2 were achieved.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126098351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Simplification of synapse devices in cellular neural network 细胞神经网络中突触装置的简化
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI: 10.1109/IMFEDK.2016.7521691
Koki Watada, Hiroki Nakanishi, Nao Nakamura, Tomoharu Yokoyama, T. Matsuda, M. Kimura
{"title":"Simplification of synapse devices in cellular neural network","authors":"Koki Watada, Hiroki Nakanishi, Nao Nakamura, Tomoharu Yokoyama, T. Matsuda, M. Kimura","doi":"10.1109/IMFEDK.2016.7521691","DOIUrl":"https://doi.org/10.1109/IMFEDK.2016.7521691","url":null,"abstract":"We are developing cellular neural networks using thin-film transistors (TFTs). Although simplification of the circuits for the neurons and synapses is also needed for the cellular neural network, the detailed discussion is not sufficient for the cellular neural network. Particularly in this study, we tried simplification of synapse devices. We used discrete trimmer resistors and capacitors for the synapse devices. Each of the synapse devices is the only one device, incredible simplification of synapse devices, and one of the kind of hardware simulation. We succeeded in realizing AND logic circuits with the simplification of the synapse devices in the cellular neural network. The results obtained from the discrete devices will suggest the future possibility of the cellular neural network using integrated thin-film devices.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131646514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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