用于LTE应用的0.5-3.5GHz宽带CMOS LNA

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521677

Wei-Rern Liao, Jeng-Rern Yang

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引用次数: 4

摘要

提出了一种适用于LTE的0.5-3.5GHz宽带CMOS低噪声放大器(LNA)。LNA设计基于一个带有电阻反馈的共源级联放大器，用于输入匹配和降低噪声系数。源从动器和LC系列谐振用于输出匹配。该LNA在0.5 ~ 3.5 GHz频率范围内的增益为17dB ~ 22dB，噪声系数(NF)为2.23 ~ 2.68 dB，在1.8 V电源电压下的直流功耗为32.8mW。LNA采用TSMC 0.18 μm CMOS工艺制造。芯片尺寸为0.6mm*0.8mm。

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A 0.5–3.5GHz wideband CMOS LNA for LTE application

This paper presents a 0.5-3.5GHz wideband CMOS low noise amplifier (LNA) for LTE application. The LNA design is based on a common source (CS) cascade amplifier with resistive feedback that is used to do input matching and reduce the noise figure. Source follower and LC series resonances are used to do output matching. The LNA achieves the gain of 17dB ~ 22dB, a noise figure (NF) of 2.23 ~ 2.68 dB at frequency from 0.5 to 3.5 GHz, The DC power consumption is 32.8mW at 1.8 V supply voltage. The LNA is fabricated with TSMC 0.18-μm CMOS process. The chip size is 0.6mm*0.8mm.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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