CMOS光子学中SiGe/Ge和III-V在Si上的非均匀集成

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521663

M. Takenaka, S. Takagi

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引用次数: 1

摘要

我们研究了基于SiGe/Ge和III-V半导体在Si上异质集成的CMOS光子学，这使我们有机会通过其优越的材料特性来增强Si光子学的功能，用于电子光子集成电路。

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Heterogeneous integration of SiGe/Ge and III–V on Si for CMOS photonics

We have investigated CMOS photonics based on heterogeneous integration of SiGe/Ge and III-V semiconductors on Si, which gives us opportunities to enhance functionalities of Si photonics through their superior material properties for electronic-photonics integrated circuits.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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