用电荷泵送法检测和表征单MOS界面陷阱

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521662

T. Tsuchiya

{"title":"用电荷泵送法检测和表征单MOS界面陷阱","authors":"T. Tsuchiya","doi":"10.1109/IMFEDK.2016.7521662","DOIUrl":null,"url":null,"abstract":"We made systematic measurements of the maximum charge pumping current from single MOS interface traps, and found that two energy levels are formed per trap, and the current shows various values of 0~2fq (f: the gate pulse frequency, q: the electron charge), depending upon the two energy levels. Moreover, we demonstrated fundamental trap counting, and found that the variability in the actual number of traps is quite large.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Detection and characterization of single MOS interface traps by the charge pumping method\",\"authors\":\"T. Tsuchiya\",\"doi\":\"10.1109/IMFEDK.2016.7521662\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We made systematic measurements of the maximum charge pumping current from single MOS interface traps, and found that two energy levels are formed per trap, and the current shows various values of 0~2fq (f: the gate pulse frequency, q: the electron charge), depending upon the two energy levels. Moreover, we demonstrated fundamental trap counting, and found that the variability in the actual number of traps is quite large.\",\"PeriodicalId\":293371,\"journal\":{\"name\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2016.7521662\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们系统地测量了单个MOS界面陷阱的最大电荷泵浦电流，发现每个陷阱形成两个能级，并且电流根据两个能级的不同呈现出0~2fq (f:栅极脉冲频率，q:电子电荷)的不同值。此外，我们演示了基本的陷阱计数，并发现陷阱的实际数量的可变性相当大。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Detection and characterization of single MOS interface traps by the charge pumping method

We made systematic measurements of the maximum charge pumping current from single MOS interface traps, and found that two energy levels are formed per trap, and the current shows various values of 0~2fq (f: the gate pulse frequency, q: the electron charge), depending upon the two energy levels. Moreover, we demonstrated fundamental trap counting, and found that the variability in the actual number of traps is quite large.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

自引率

0.00%

发文量