b基n+-n Ge/4H-SiC异质结的电学特性

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521688

S. Morita, T. Nishimura, J. Liang, N. Shigekawa

{"title":"b基n+-n Ge/4H-SiC异质结的电学特性","authors":"S. Morita, T. Nishimura, J. Liang, N. Shigekawa","doi":"10.1109/IMFEDK.2016.7521688","DOIUrl":null,"url":null,"abstract":"n+-Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) measurements. The band diagram of heterojunctions was estimated based on the C-V characteristics.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions\",\"authors\":\"S. Morita, T. Nishimura, J. Liang, N. Shigekawa\",\"doi\":\"10.1109/IMFEDK.2016.7521688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"n+-Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) measurements. The band diagram of heterojunctions was estimated based on the C-V characteristics.\",\"PeriodicalId\":293371,\"journal\":{\"name\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"volume\":\"2012 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMFEDK.2016.7521688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过表面活化键合形成n+-Ge/n- 4h - sic异质结。通过测量异质结的电流电压(I-V)和电容电压(C-V)，对异质结的电学特性进行了实验研究。根据C-V特性估计了异质结的能带图。

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Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions

n+-Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) measurements. The band diagram of heterojunctions was estimated based on the C-V characteristics.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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