Electrical characteristics of SAB-based n+-n Ge/4H-SiC heterojunctions

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521688

S. Morita, T. Nishimura, J. Liang, N. Shigekawa

引用次数: 0

Abstract

n+-Ge/n-4H-SiC heterojunctions were formed by surface activated bonding. The electrical characteristics of the heterojunctions were experimentally investigated by measuring their current-voltage (I-V) and capacitance-voltage (C-V) measurements. The band diagram of heterojunctions was estimated based on the C-V characteristics.

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b基n+-n Ge/4H-SiC异质结的电学特性

通过表面活化键合形成n+-Ge/n- 4h - sic异质结。通过测量异质结的电流电压(I-V)和电容电压(C-V)，对异质结的电学特性进行了实验研究。根据C-V特性估计了异质结的能带图。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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