Ga-Sn-O薄膜器件的磁阻效应

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2016-06-23 DOI:10.1109/IMFEDK.2016.7521685

Asuka Fukawa, Kota Imanishi, S. Miyamura, T. Matsuda, M. Kimura

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引用次数: 0

摘要

研究了GTO薄膜器件的磁流变效应。发现了正、负MR效应。GTO薄膜器件发生了巨大的变化。此外，高浓度氧的GTO薄膜器件表现出负MR效应。这可能是由于随机电位的产生和氧的安德森局域化。最后，在某些特殊条件下，得到了极大的磁流变效应。需要进一步的讨论来阐明这种大MR效应的机制。

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Magnetoresistance effect of Ga-Sn-O thin-film device

We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random potential and Anderson localization with oxygen. Finally, in the case of some special condition, extremely large MR effect is obtained. Further discussion is needed to clarify the mechanism of this large MR effect.

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来源期刊

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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