{"title":"America, Japan, and Europe-which areas have the edge in customer satisfaction and why [semiconductor capital equipment]","authors":"C.D. Burgeson","doi":"10.1109/ASMC.1998.731557","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731557","url":null,"abstract":"The results are in for the 1998 VLSI Research Inc. customer satisfaction survey on semiconductor capital equipment, and the overall ratings have increased by 0.10 points, to 7.28. This outcome is the effect of improved customer support and equipment performance by Japanese and American suppliers. One of the reasons for the year's enhanced effort is the lack of growth in the equipment market. Although focusing on customer satisfaction is important under any circumstances, companies often increase their attention to customers as sales decrease. As a consequence of this extra attention, the competition for customer satisfaction is increasing. For example, every year the top companies improve the previous year's score, and the top ratings in all five product categories have increased in the last two years. Another example of competition is the convergence of scores among areas of the world. In the 1996 survey, the difference in ratings between first place (European suppliers) and last (Japanese suppliers) was 0.87 points, but this difference decreased to 0.78 points in 1997. In the 1998 survey, European manufacturers still have the highest ratings and Japanese have the lowest, but the difference is now only 0.40 points. The main reason for this immense change in the past year is a surprising decline in ratings for European suppliers. This article analyses survey results for each of the three supplier groups, and looks at the reasons behind the convergence in customer satisfaction ratings.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"1651 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129294888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"In-line defect density targets for new technology from development to manufacturing","authors":"E. Shamble, M. Ben-tzur, S. Sharifzadeh","doi":"10.1109/ASMC.1998.731548","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731548","url":null,"abstract":"IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127282221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Rulkens, E.J.J. Van Campen, J. van Herk, J. Rooda
{"title":"Batch size optimization of a furnace and pre-clean area by using dynamic simulations","authors":"H. Rulkens, E.J.J. Van Campen, J. van Herk, J. Rooda","doi":"10.1109/ASMC.1998.731643","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731643","url":null,"abstract":"A dynamic simulation model is a powerful and fast tool to analyze existing production situations and to optimize the performance by evaluating alternative scheduling rules. This paper presents such an analysis and optimization for a furnace and pre-clean area of a wafer fab. The design of a dynamic model is described. Furthermore, experiments are described that illustrate the influence of a minimum batch size scheduling rule. For a specific production situation, the minimum batch sizes per furnace process which optimize cycle time are determined.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126699549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Defect inspection sampling plans-which one is right for me?","authors":"B. Scanlan","doi":"10.1109/ASMC.1998.731415","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731415","url":null,"abstract":"Most wafer fabrication lines now employ some form of defect inspection plan to identify killer defect types on its wafers and thus protect and predict die sort yields. Although often viewed as a nonvalue added process step, defect inspection is typically incorporated into the process flow at a number of points. However, as with all process steps, there is an associated cost, and oversampling can add more to the wafer manufacturing cost than the cost of field loss that might otherwise have been recovered. It is therefore imperative that the sampling methodology used in the fab is cost effective, i.e. that the benefits gained far outweigh inspection cost. As a minimum, the plan must be able to detect excursions that will ultimately result in probe yield loss. Also, excursion detection must be timely to ensure that the product at risk from excursions is minimized. In summary, the plan must be consistent with the acceptable excursion yield loss in the fab. This paper looks at plans used in two very different fabs on the same site. The first is a 4\" line with >1 /spl mu/m geometries. The second is a 6\" line with <0.5 /spl mu/m geometries. The same overall structure governs both fabs and the equipment set in both areas is largely similar. However, the sampling strategy used in the two areas is different, as each area plan is tailored specifically to meet its needs in relation to yield objectives. This paper describes the two plans used, and looks at how inspection sensitivity must be tailored to meet the needs of the plan. We look at various defect types, and how some must be sieved out to ensure that the inspection data generated is meaningful.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124432435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Nouri, O. Laparra, H. Sur, G.C. Tai, D. Pramanik, M. Manley
{"title":"A manufacturable shallow trench isolation process for 0.18 /spl mu/m and beyond-optimization, stress reduction and electrical performance","authors":"F. Nouri, O. Laparra, H. Sur, G.C. Tai, D. Pramanik, M. Manley","doi":"10.1109/ASMC.1998.731638","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731638","url":null,"abstract":"An integrated shallow trench isolation process utilizing HDP (high density plasma) oxide and a highly manufacturable corner oxidation is described. The choice of trench corner oxidation temperature is shown to be critical in reducing silicon stress, and hence junction leakage, to the levels required by multi-million gate designs. This STI process is shown to be extremely robust and manufacturable. Optimal design of the trench depth and well profiles is shown to provide well-edge isolation adequate for sub-0.18 /spl mu/m technologies.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132833709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Statistical methods for measurement reduction in semiconductor manufacturing","authors":"R. Babikian, Curt Engelhard","doi":"10.1109/ASMC.1998.731556","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731556","url":null,"abstract":"Measurement reduction in wafer fabrication represents a significant opportunity for cost reduction and improvement in operational efficiency. This translates into savings on test wafers, metrology equipment, technician time and throughput time. With ever-increasing process complexities and moves to 300 mm technology, measurement costs are increasingly becoming an area of focus to improve manufacturing efficiency. At Intel, statistical methodologies and management systems were developed to facilitate the reduction of measurements to reduce measurement costs.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130818685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Srinivasan, R. Caple, G. Hills, G. Mueller, T. Nguyen, E. Wagganer
{"title":"Performance and productivity improvements in an advanced dielectric etch reactor for sub 0.3 /spl mu/m applications","authors":"M. Srinivasan, R. Caple, G. Hills, G. Mueller, T. Nguyen, E. Wagganer","doi":"10.1109/ASMC.1998.731639","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731639","url":null,"abstract":"Dielectric film etching represents one of the most challenging aspects of semiconductor processing. At present, a dielectric etch reactor must be capable of handling a range of dielectrics, such as doped and undoped silica glass, silicon nitride, organic anti-reflection layers and low-k dielectric materials of a predominantly organic composition. Successful etch tools perform the \"critical\" steps required for contact, self-aligned contact (SAC), via and dual damascene structures as well as the less critical steps such as spacers and passivation that are required by leading edge 0.25 /spl mu/m generation devices as they enter volume production. Finally, all the etches must be cost effective as measured with the standard metrics of cost of ownership (COO), and overall equipment effectiveness (OEE). In this paper, we describe how these metrics have been used to generate several product improvement programs for an advanced dielectric reactor, the 4520XL/sub E//sup TM/ from Lam Research. Both process and productivity improvements are shown for sub-0.3 /spl mu/m feature size devices. These improvements show promise for extension of the applicability of the 4520XL/sub E/ reactor to sub-0.2 /spl mu/m feature sizes.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128844340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Better dispatch application-a success story [IC manufacture]","authors":"Anke Giegandt, G. Nicholson","doi":"10.1109/ASMC.1998.731632","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731632","url":null,"abstract":"Using priority rules, a project was conducted to implement a dispatching system in a high-volume semiconductor front-end production line. The specific goals of this project were to apply dispatch rules to reduce cycle time and balance the WIP in the line. This paper presents the project methodology, implemented dispatch policies and measurable results in different production areas, including furnace/wet etch, CMP, plasma etch, ion implantation, and lithography.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131839978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Novel methodology to include all measured extension values per defect to improve defect size distributions","authors":"C. Hess, L. Weiland","doi":"10.1109/ASMC.1998.731553","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731553","url":null,"abstract":"Defect size distributions play an important role in process characterization and yield prediction. In order to reduce time and costs of defect size extraction procedures, the paper presents a novel methodology to determine defect size distributions. For that, we use all measured defect extension values per inspected defect, as compared to known methodologies which use just one size value per defect. Our approach enables reduction of the sample of defects to be inspected in semiconductor manufacturing fabs. Nevertheless, the novel methodology provides even better defect size distribution accuracy.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"59 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134530873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The advantages of using short cycle time manufacturing (SCM) instead of continuous flow manufacturing (CFM)","authors":"D. P. Martin","doi":"10.1109/ASMC.1998.731385","DOIUrl":"https://doi.org/10.1109/ASMC.1998.731385","url":null,"abstract":"Over the past two decades, continuous flow manufacturing (CFM) has been the principal operational tool to manage and improve manufacturing asset usage. CFM measures and manages throughput of the tools/toolsets that comprise the manufacturing line. Various systems have been proposed to help manage throughput (e.g. PUSH, PULL, theory of constraints) with their attendant control methodologies (e.g. MRP, KANBAN, drum-buffer-rope). This paper explores how the X-factor (normalized cycle time) rather than throughput is used as the prime line control and analysis parameter; hence, the name short cycle time manufacturing (SCM). As manufacturing lines have both throughput and X-factor commitments, it is essential to understand the fundamental relationships between throughput, capacity and X-factor. This paper also shows that X-factor is a much more sensitive indicator of capacity problems than throughput, as X-factor increases rapidly as throughput approaches effective capacity. This X-factor sensitivity can be used as a diagnostic tool to uncover unforeseen capacity issues. Short cycle time manufacturing (SCM) allows each tool/toolset to be analyzed depending on its demonstrated X-factor and capacity versus target to determine which tools/toolsets need improvement, as the overall X-factor of the line is just the weighted sums of the component toolset X-factors. This paper also analyzes the impact of mix and volume with a cycle time constraint on the capacity of tools that are affected by batch or train size. SCM provides significant advantages over CFM in helping to manage and improve manufacturing asset utilization.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133079740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}