缺陷检验抽样计划-哪一个适合我?

B. Scanlan
{"title":"缺陷检验抽样计划-哪一个适合我?","authors":"B. Scanlan","doi":"10.1109/ASMC.1998.731415","DOIUrl":null,"url":null,"abstract":"Most wafer fabrication lines now employ some form of defect inspection plan to identify killer defect types on its wafers and thus protect and predict die sort yields. Although often viewed as a nonvalue added process step, defect inspection is typically incorporated into the process flow at a number of points. However, as with all process steps, there is an associated cost, and oversampling can add more to the wafer manufacturing cost than the cost of field loss that might otherwise have been recovered. It is therefore imperative that the sampling methodology used in the fab is cost effective, i.e. that the benefits gained far outweigh inspection cost. As a minimum, the plan must be able to detect excursions that will ultimately result in probe yield loss. Also, excursion detection must be timely to ensure that the product at risk from excursions is minimized. In summary, the plan must be consistent with the acceptable excursion yield loss in the fab. This paper looks at plans used in two very different fabs on the same site. The first is a 4\" line with >1 /spl mu/m geometries. The second is a 6\" line with <0.5 /spl mu/m geometries. The same overall structure governs both fabs and the equipment set in both areas is largely similar. However, the sampling strategy used in the two areas is different, as each area plan is tailored specifically to meet its needs in relation to yield objectives. This paper describes the two plans used, and looks at how inspection sensitivity must be tailored to meet the needs of the plan. We look at various defect types, and how some must be sieved out to ensure that the inspection data generated is meaningful.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Defect inspection sampling plans-which one is right for me?\",\"authors\":\"B. Scanlan\",\"doi\":\"10.1109/ASMC.1998.731415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Most wafer fabrication lines now employ some form of defect inspection plan to identify killer defect types on its wafers and thus protect and predict die sort yields. Although often viewed as a nonvalue added process step, defect inspection is typically incorporated into the process flow at a number of points. However, as with all process steps, there is an associated cost, and oversampling can add more to the wafer manufacturing cost than the cost of field loss that might otherwise have been recovered. It is therefore imperative that the sampling methodology used in the fab is cost effective, i.e. that the benefits gained far outweigh inspection cost. As a minimum, the plan must be able to detect excursions that will ultimately result in probe yield loss. Also, excursion detection must be timely to ensure that the product at risk from excursions is minimized. In summary, the plan must be consistent with the acceptable excursion yield loss in the fab. This paper looks at plans used in two very different fabs on the same site. The first is a 4\\\" line with >1 /spl mu/m geometries. The second is a 6\\\" line with <0.5 /spl mu/m geometries. The same overall structure governs both fabs and the equipment set in both areas is largely similar. However, the sampling strategy used in the two areas is different, as each area plan is tailored specifically to meet its needs in relation to yield objectives. This paper describes the two plans used, and looks at how inspection sensitivity must be tailored to meet the needs of the plan. We look at various defect types, and how some must be sieved out to ensure that the inspection data generated is meaningful.\",\"PeriodicalId\":290016,\"journal\":{\"name\":\"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)\",\"volume\":\"117 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1998.731415\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1998.731415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

大多数晶圆生产线现在都采用某种形式的缺陷检测计划来识别晶圆上的致命缺陷类型,从而保护和预测晶圆的分选良率。尽管缺陷检查通常被看作是一个无价值的过程步骤,但它通常在许多点上被纳入到过程流中。然而,与所有的工艺步骤一样,有一个相关的成本,并且过采样可能会增加晶圆制造成本,而不是本可以回收的场损失成本。因此,在晶圆厂中使用的采样方法必须具有成本效益,即获得的好处远远超过检查成本。至少,该计划必须能够检测到最终会导致探头产量损失的偏移。此外,偏移检测必须及时,以确保从偏移风险的产品被最小化。总之,该计划必须与晶圆厂可接受的漂移良率损失相一致。本文着眼于同一地点的两个非常不同的晶圆厂所使用的计划。第一种是4英寸线,几何形状>1 /spl mu/m。第二种是6英寸线,几何形状<0.5 /spl mu/m。两个晶圆厂的整体结构相同,两个地区的设备设置也大致相似。但是,两个地区使用的抽样策略是不同的,因为每个地区的计划都是专门为满足其与产量目标有关的需要而量身定制的。本文描述了所使用的两种方案,并研究了如何调整检测灵敏度以满足方案的需要。我们查看各种缺陷类型,以及必须如何筛出其中一些以确保生成的检查数据是有意义的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defect inspection sampling plans-which one is right for me?
Most wafer fabrication lines now employ some form of defect inspection plan to identify killer defect types on its wafers and thus protect and predict die sort yields. Although often viewed as a nonvalue added process step, defect inspection is typically incorporated into the process flow at a number of points. However, as with all process steps, there is an associated cost, and oversampling can add more to the wafer manufacturing cost than the cost of field loss that might otherwise have been recovered. It is therefore imperative that the sampling methodology used in the fab is cost effective, i.e. that the benefits gained far outweigh inspection cost. As a minimum, the plan must be able to detect excursions that will ultimately result in probe yield loss. Also, excursion detection must be timely to ensure that the product at risk from excursions is minimized. In summary, the plan must be consistent with the acceptable excursion yield loss in the fab. This paper looks at plans used in two very different fabs on the same site. The first is a 4" line with >1 /spl mu/m geometries. The second is a 6" line with <0.5 /spl mu/m geometries. The same overall structure governs both fabs and the equipment set in both areas is largely similar. However, the sampling strategy used in the two areas is different, as each area plan is tailored specifically to meet its needs in relation to yield objectives. This paper describes the two plans used, and looks at how inspection sensitivity must be tailored to meet the needs of the plan. We look at various defect types, and how some must be sieved out to ensure that the inspection data generated is meaningful.
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