{"title":"新技术从开发到制造的在线缺陷密度目标","authors":"E. Shamble, M. Ben-tzur, S. Sharifzadeh","doi":"10.1109/ASMC.1998.731548","DOIUrl":null,"url":null,"abstract":"IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-line defect density targets for new technology from development to manufacturing\",\"authors\":\"E. Shamble, M. Ben-tzur, S. Sharifzadeh\",\"doi\":\"10.1109/ASMC.1998.731548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.\",\"PeriodicalId\":290016,\"journal\":{\"name\":\"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1998.731548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1998.731548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In-line defect density targets for new technology from development to manufacturing
IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.