新技术从开发到制造的在线缺陷密度目标

E. Shamble, M. Ben-tzur, S. Sharifzadeh
{"title":"新技术从开发到制造的在线缺陷密度目标","authors":"E. Shamble, M. Ben-tzur, S. Sharifzadeh","doi":"10.1109/ASMC.1998.731548","DOIUrl":null,"url":null,"abstract":"IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.","PeriodicalId":290016,"journal":{"name":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-line defect density targets for new technology from development to manufacturing\",\"authors\":\"E. Shamble, M. Ben-tzur, S. Sharifzadeh\",\"doi\":\"10.1109/ASMC.1998.731548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.\",\"PeriodicalId\":290016,\"journal\":{\"name\":\"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-09-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1998.731548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1998.731548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

集成电路制造商不断缩小器件尺寸,以便从硅中获得更多价值。将旧技术推向极限是收缩路径的一部分。要回答的关键问题之一是,在开发的各个阶段,在线缺陷密度必须有多低,才能确保经济、可靠和及时地转移到制造中。本文讨论了解决这一问题的一种方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-line defect density targets for new technology from development to manufacturing
IC manufacturers continuously shrink device dimensions, in order to gain more value from the silicon. Pushing old technologies to the limits is part of the shrinkage path. One of the key questions to be answered is how low must the in-line defect density be at the various stages of development to ensure an economic, robust, and timely transfer to manufacturing. This paper discusses one solution to this question.
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