Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)最新文献_第10页

Evaluation of strain-induced mobility variation in TiN metal gate SOI n-MOSFETs TiN金属栅极SOI n- mosfet中应变诱导迁移率变化的评价

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356572

T. Guillaume, M. Mouis, S. Maitrejean, A. Poncet, M. Vinet, S. Deleonibus

引用次数: 9

Failure rate predictions for 0.35 /spl mu/m Flash EEPROM memories from accelerated read disturb tests 从加速读干扰测试中预测0.35 /spl mu/m闪存EEPROM存储器的故障率

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356541

T. Vermeulen, T. Yao, A. Lowe, P. Cacharelis, R. Degraeve, J. van Houdt

引用次数: 4

Gate-capacitance extraction from RF C-V measurements [MOS device applications] 射频C-V测量中的门电容提取[MOS器件应用]

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356501

G. Sasse, R. de Kort, J. Schmitz

引用次数: 4

Thermal scaling of ultra-thin SOI: reduced resistance at low temperature RTA 超薄SOI的热结垢:降低低温RTA电阻

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356512

Jong-Heon Yang, Jihun Oh, K. Im, I. Baek, C. Ahn, Jonghyurk Park, W. Cho, Seongjae Lee

引用次数: 1

Experimental evidence and statistical modeling of cooperating defects in stressed oxides [FLASH memory example] 应力氧化物中协同缺陷的实验证据和统计建模[FLASH存储器实例]

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356526

F. Driussi, D. Esseni, L. Selmi, M. van Duuren, F. Widdershoven

引用次数: 3

Influence of metal gate materials and processing on planar CMOS device characteristics with high-k gate dielectrics 金属栅极材料及工艺对高k栅极介质平面CMOS器件特性的影响

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356520

P. Majhi, C. Young, G. Bersuker, H. Wen, G.A. Brown, B. Foran, R. Choi, P. Zeitzoff, H. Huff

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引用次数: 8

High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy 扫描扩展电阻显微镜在亚100nm硅纳米器件上的高分辨率二维载流子分析

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356498

P. Eyben, H. Fukutome, D. Álvarez, W. Vandervorst

引用次数: 0

A new approach to the self-consistent solution of the Schrodinger-Poisson equations in nanowire MOSFETs 纳米线mosfet中薛定谔-泊松方程自洽解的新方法

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356518

E. Gnani, S. Reggiani, M. Rudan, G. Baccarani

引用次数: 26

Electrical characterization of partially insulated MOSFETs with buried insulators under source/drain regions 源/漏区埋地绝缘体部分绝缘mosfet的电学特性

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356532

C. Oh, K. Yeo, Min Sang Kim, Chang-Sub Lee, D. Choi, Sung Hwan Kim, S. Lee, Sung-min Kim, Jung-dong Choe, Yong Kyu Lee, E. Yoon, Ming Li, S. Suk, Dong-Won Kim, Donggun Park, Kinam Kim

引用次数: 6

The electro-thermal Smoothie database model for LDMOS devices LDMOS器件的电热Smoothie数据库模型

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI: 10.1109/ESSDER.2004.1356590

V. Cuoco, W. Neo, M. Spirito, O. Yanson, N. Nenadovic, L. D. de Vreede, H. Jos, J. Burghartz

引用次数: 8