源/漏区埋地绝缘体部分绝缘mosfet的电学特性

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356532

C. Oh, K. Yeo, Min Sang Kim, Chang-Sub Lee, D. Choi, Sung Hwan Kim, S. Lee, Sung-min Kim, Jung-dong Choe, Yong Kyu Lee, E. Yoon, Ming Li, S. Suk, Dong-Won Kim, Donggun Park, Kinam Kim

{"title":"源/漏区埋地绝缘体部分绝缘mosfet的电学特性","authors":"C. Oh, K. Yeo, Min Sang Kim, Chang-Sub Lee, D. Choi, Sung Hwan Kim, S. Lee, Sung-min Kim, Jung-dong Choe, Yong Kyu Lee, E. Yoon, Ming Li, S. Suk, Dong-Won Kim, Donggun Park, Kinam Kim","doi":"10.1109/ESSDER.2004.1356532","DOIUrl":null,"url":null,"abstract":"In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET), for ultimate scaling of planar MOSFETs, through simulation and fabrication. The newly fabricated PiFET showed outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from a self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be an attractive alternative for ultimate scaling of planar MOSFETs.","PeriodicalId":287103,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Electrical characterization of partially insulated MOSFETs with buried insulators under source/drain regions\",\"authors\":\"C. Oh, K. Yeo, Min Sang Kim, Chang-Sub Lee, D. Choi, Sung Hwan Kim, S. Lee, Sung-min Kim, Jung-dong Choe, Yong Kyu Lee, E. Yoon, Ming Li, S. Suk, Dong-Won Kim, Donggun Park, Kinam Kim\",\"doi\":\"10.1109/ESSDER.2004.1356532\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET), for ultimate scaling of planar MOSFETs, through simulation and fabrication. The newly fabricated PiFET showed outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from a self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be an attractive alternative for ultimate scaling of planar MOSFETs.\",\"PeriodicalId\":287103,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDER.2004.1356532\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDER.2004.1356532","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

在本文中，我们通过模拟和制造评估了部分绝缘MOSFET (PiFET)的结构优点，用于平面MOSFET的最终缩放。与传统的MOSFET相比，新制造的PiFET具有出色的短沟道效应(SCE)抗扰度和断流特性，这是由于自诱导晕区，自限S/D浅结以及由于PiOX层形成而减小的结面积。因此，PiFET可以成为平面mosfet的最终缩放的有吸引力的替代方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical characterization of partially insulated MOSFETs with buried insulators under source/drain regions

In this article, we evaluated the structural merits of a partially insulated MOSFET (PiFET), for ultimate scaling of planar MOSFETs, through simulation and fabrication. The newly fabricated PiFET showed outstanding short channel effect (SCE) immunity and off-current characteristics over the conventional MOSFET, resulting from a self-induced halo region, self-limiting S/D shallow junction, and reduced junction area due to PiOX layer formation. Thus, the PiFET can be an attractive alternative for ultimate scaling of planar MOSFETs.

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Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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