Thermal scaling of ultra-thin SOI: reduced resistance at low temperature RTA

Abstract

This paper explores the effect of silicon-on-insulator (SOI) thickness scaling on its electrical properties. It is observed, for the first time, that the sheet resistance of ultra-thin SOI is lower than that of thick SOI under the same conditions of plasma doping and thermal annealing at low RTA temperature. This shows that dopant profile distribution and activation efficiency are different with different SOI thickness and different RTA temperature. In this work, we investigated the sheet resistance of SOI and made a comparative study of change in drain saturation current of a long channel FD SOI-MOSFET, fabricated with various SOI thickness and RTA temperatures, for the understanding of thermal scaling of ultra-thin SOI.