High resolution two-dimensional carrier profiling on sub-100nm silicon nano-devices using scanning spreading resistance microscopy

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) Pub Date : 2004-11-15 DOI:10.1109/ESSDER.2004.1356498

P. Eyben, H. Fukutome, D. Álvarez, W. Vandervorst

引用次数: 0

Abstract

This work presents the recent progress in scanning spreading resistance microscopy( SSRM) capabilities highlighting enhanced spatial resolution (<5 nm) and excellent concentration sensitivity (<20%). The latter is demonstrated through the analysis of three carrier profiling applications i.e. the calibration of process simulations for a 90 nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40 nm n-MOS technology and the study of activation problems in SPER-anneals of shallow implants.

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扫描扩展电阻显微镜在亚100nm硅纳米器件上的高分辨率二维载流子分析

这项工作介绍了扫描扩散电阻显微镜(SSRM)能力的最新进展，突出了增强的空间分辨率(<5 nm)和优异的浓度灵敏度(<20%)。后者通过对三个载流子谱分析应用的分析来证明，即校准90 nm n-MOS技术的过程模拟，确定氮化对40 nm n-MOS技术横向扩散的影响，以及研究浅层植入物sper退火中的激活问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850)

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