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1992 International Technical Digest on Electron Devices Meeting最新文献

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Prediction of hot-carrier degradation in digital CMOS VLSI by timing simulation 基于时序仿真的数字CMOS VLSI热载流子退化预测
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307419
E. Minami, K. Quader, P. Ko, C. Hu
{"title":"Prediction of hot-carrier degradation in digital CMOS VLSI by timing simulation","authors":"E. Minami, K. Quader, P. Ko, C. Hu","doi":"10.1109/IEDM.1992.307419","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307419","url":null,"abstract":"We have adapted an RC time-constant based timing simulator to predict hot-carrier degradation effects in digital CMOS circuits. The use of a timing simulator enables a quick characterization of degradation in large circuits. The speed-up over SPICE-based simulation can be greater than 3 orders-of-magnitude.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131378858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Potential profile engineering for quarter micron buried channel pMOSFETs with n regions in the channel 四分之一微米埋地沟道pmosfet的潜在剖面工程
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307499
K. Okabe, T. Ikezawa, I. Sakai, M. Fukuma
{"title":"Potential profile engineering for quarter micron buried channel pMOSFETs with n regions in the channel","authors":"K. Okabe, T. Ikezawa, I. Sakai, M. Fukuma","doi":"10.1109/IEDM.1992.307499","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307499","url":null,"abstract":"A new design approach featured by potential profile engineering is proposed for deep sub-half micron buried channel pMOSFETs by placing n regions within the LDD depletion layers. The newly designed n regions are effective for suppressing drain induced barrier lowering (DIBL) of buried channel pMOSFETs, without any degradation in Vt controllability. Simulation results suggest the potential profile engineering is useful for designing 0.25 mu m buried channel pMOSFETs with high driving capability and good Vt controllability.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121770818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Sub-20 psec ECL circuits with 50 GHz fmax self-aligned SiGe HBTs 低于20秒ECL电路，50 GHz fmax自对准SiGe hbt
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307386
F. Sato, T. Hashimoto, T. Tatsumi, H. Kitahata, T. Tashiro
{"title":"Sub-20 psec ECL circuits with 50 GHz fmax self-aligned SiGe HBTs","authors":"F. Sato, T. Hashimoto, T. Tatsumi, H. Kitahata, T. Tashiro","doi":"10.1109/IEDM.1992.307386","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307386","url":null,"abstract":"This paper describes a high fmax self-aligned SiGe heterojunction bipolar transistor (HBT) technology which is based on the self-aligned selective epitaxial growth technology including Ge graded profile and link-base engineering using a BSG sidewall structure. The HBT has a Super Self-aligned Selectively grown SiGe Base (SSSB) structure. Base profile design and a 2-step annealing technique have realized a f/sub T/ of 51 GHz and low sheet resistance at the link-base region, and furthermore have accomplished fmax of as high as 50 GHz. ECL circuits of 19 psec gate delay have been achieved by using this SiGe HBT technology.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132230086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Gate-induced band-to-band tunneling leakage current in LDD MOSFETs LDD mosfet的栅致带间隧穿漏电流
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307329
H. Wann, P. Ko, C. Hu
{"title":"Gate-induced band-to-band tunneling leakage current in LDD MOSFETs","authors":"H. Wann, P. Ko, C. Hu","doi":"10.1109/IEDM.1992.307329","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307329","url":null,"abstract":"Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes. Therefore the impact of this tunneling leakage current can be correctly evaluated. Based on this model, the impact of GIDL on low off-state leakage drain engineering and on oxide scaling is investigated.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132293613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure 具有横向漏波导结构的超高量子效率的AlGaInP可见激光二极管
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307495
I. Kidoguchi, S. Kamiyama, M. Mannoh, J. Hoshina, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka
{"title":"AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure","authors":"I. Kidoguchi, S. Kamiyama, M. Mannoh, J. Hoshina, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka","doi":"10.1109/IEDM.1992.307495","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307495","url":null,"abstract":"AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134443118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Facet engineered elevated source/drain by selective Si epitaxy for 0.35 micron MOSFETS 通过选择性Si外延，为0.35微米mosfet设计了高源极/漏极Facet
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307491
C. Mazure, J. Fitch, C. Gunderson
{"title":"Facet engineered elevated source/drain by selective Si epitaxy for 0.35 micron MOSFETS","authors":"C. Mazure, J. Fitch, C. Gunderson","doi":"10.1109/IEDM.1992.307491","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307491","url":null,"abstract":"A novel facet-engineered elevated source/drain formation design is presented. It is found that the ex situ clean prior to selective Si epitaxial growth (SEG) determines the resulting facets on the SEG-source/drain. We show that low angle facets are very advantageous for minimizing parasitic Miller capacitances, while simultaneously grading the source/drain junction near the gate edge and retrieving the source/drain junction from the substrate elsewhere, thus reducing the junction capacitance. Further, we show that both a strong current drive (I/sub DS/) increase and a reduction in parasitic junction capacitance can be realized with facet-engineered phosphorus doped SEG-source/drain with no detrimental effects to short channel device behavior.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130307334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 50 V smart power process with dielectric isolation by SIMOX 采用SIMOX介质隔离的50v智能电源工艺
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307347
J. Weyers, H. Vogt
{"title":"A 50 V smart power process with dielectric isolation by SIMOX","authors":"J. Weyers, H. Vogt","doi":"10.1109/IEDM.1992.307347","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307347","url":null,"abstract":"A new process has been developed which provides dielectrically isolated power and low voltage devices by means of rather standard VLSI CMOS technology. Isolation is obtained by SIMOX and trenches. For Smart Power applications this process allows the manufacturing of 50 V vertical DMOS transistors (VDMOS) together with 50 V dielectrically isolated quasivertical DMOS transistors (QVDMOS). For control circuit design CMOS, high voltage PMOS transistors (HVPMOS), NPN transistors, JFETs, Zener and Schottky diodes are available on the same chip. Thus, the designer has at hand a wide range of devices which allows an optimum solution for many circuit applications.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115373910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
An efficient multi-band Monte Carlo model with anisotropic impact ionization 具有各向异性冲击电离的高效多波段蒙特卡罗模型
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307461
X. L. Wang, V. Chandramouli, C. Maziar, A. Tasch
{"title":"An efficient multi-band Monte Carlo model with anisotropic impact ionization","authors":"X. L. Wang, V. Chandramouli, C. Maziar, A. Tasch","doi":"10.1109/IEDM.1992.307461","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307461","url":null,"abstract":"A new impact ionization model for our multi-band Monte Carlo simulator SLAPSHOT (Simulation Program Suitable for Hot Carrier Studies) is described in this paper. The new model, based on a modified anisotropic Keldysh formula, uses a threshold energy calculated by invoking both energy and momentum conservation in full pseudopotential bands. The new model is used, together with experimental impact ionization data, to accurately estimate the extent of the high energy tail of the energy distribution function and appropriate electron-phonon coupling constants for use in second energy band carrier transport descriptions.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114277988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAM's 用于千兆级DRAM的超高电荷存储容量锆钛酸铅薄膜
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307519
R. Moazzami, P. Maniar, R. Jones, A. C. Campbell, C. Mogab
{"title":"Ultra-high charge storage capacity ferroelectric lead zirconate titanate thin films for gigabit-scale DRAM's","authors":"R. Moazzami, P. Maniar, R. Jones, A. C. Campbell, C. Mogab","doi":"10.1109/IEDM.1992.307519","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307519","url":null,"abstract":"This paper describes an investigation of thickness scaling of sol gel-derived ferroelectric lead zirconate titanate (PZT) thin films that demonstrates the highest charge storage capacity (220 fC/ mu m/sup 2/ for a 1.5 V voltage swing) ever reported, low leakage current density (<10-7 A/cm/sup 2/ at 0.75 V for V/sub DD//2 operation), and good dielectric integrity. V/sub DD//2 operation is also shown to be viable with these ferroelectric films since no fatigue is observed after 10/sup 11/ polarization reversals. These PZT films hold promise as an alternative to the conventional trench and stacked capacitor cell technologies employing SiO/sub 2//Si/sub 3/N/sub 4/ dielectrics which demand extremely severe geometries and exceedingly complex processes to meet the charge storage specifications of gigabit-scale DRAM's.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115149334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Modeling hot carrier reliability of MOSFET: what is necessary and what is possible? MOSFET热载流子可靠性建模:什么是必要的，什么是可能的?
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307459
W. Hansch
{"title":"Modeling hot carrier reliability of MOSFET: what is necessary and what is possible?","authors":"W. Hansch","doi":"10.1109/IEDM.1992.307459","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307459","url":null,"abstract":"The components of a simulation tool for a self-consistent calculation of DC hot electron device degradation are discussed. The tool is based on the drift diffusion approximation including one of its generalizations. It includes carrier injection into the gate oxide, trapping and detrapping of oxide charges and interface states, and their feed back onto the device field.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124951378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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