采用SIMOX介质隔离的50v智能电源工艺

J. Weyers, H. Vogt
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引用次数: 16

摘要

通过相当标准的VLSI CMOS技术,开发了一种提供介电隔离电源和低压器件的新工艺。隔离是通过SIMOX和沟槽获得的。对于智能电源应用,该工艺允许制造50 V垂直DMOS晶体管(VDMOS)以及50 V介电隔离准垂直DMOS晶体管(QVDMOS)。对于控制电路设计CMOS,高压PMOS晶体管(HVPMOS), NPN晶体管,jfet,齐纳和肖特基二极管可在同一芯片上使用。因此,设计人员手头有各种各样的器件,可以为许多电路应用提供最佳解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 50 V smart power process with dielectric isolation by SIMOX
A new process has been developed which provides dielectrically isolated power and low voltage devices by means of rather standard VLSI CMOS technology. Isolation is obtained by SIMOX and trenches. For Smart Power applications this process allows the manufacturing of 50 V vertical DMOS transistors (VDMOS) together with 50 V dielectrically isolated quasivertical DMOS transistors (QVDMOS). For control circuit design CMOS, high voltage PMOS transistors (HVPMOS), NPN transistors, JFETs, Zener and Schottky diodes are available on the same chip. Thus, the designer has at hand a wide range of devices which allows an optimum solution for many circuit applications.<>
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