发布求助
文献互助 智能选刊 最新文献

1992 International Technical Digest on Electron Devices Meeting最新文献

筛选
英文 中文
New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics 闪存EEPROM单元的新写/擦除操作技术，以改善读干扰特性
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1997-10-25 DOI: 10.1109/IEDM.1992.307433
T. Endoh, H. Iizuka, S. Aritome, R. Shirota, F. Masuoka
{"title":"New write/erase operation technology for flash EEPROM cells to improve the read disturb characteristics","authors":"T. Endoh, H. Iizuka, S. Aritome, R. Shirota, F. Masuoka","doi":"10.1109/IEDM.1992.307433","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307433","url":null,"abstract":"This paper describes the new write/erase operation methods in order to improve the read disturb characteristics for flash EEPROM cells which are written by channel hot electron injection and erased by F-N tunneling emission from the floating gate to the substrate. The new operation method is either applying a reverse polarity pulse after each erase pulse or applying a series of shorter erase pulses instead of a long single erase pulse. It is confirmed that by using the above operation method, the leakage current can be suppressed, and then the read disturb life time after 10/sup 5/ cycles W/E operation is more than 10 times longer in comparison with the conventional method.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126765321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A high brightness electron beam produced by a ferroelectric cathode 由铁电阴极产生的高亮度电子束
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1995-03-06 DOI: 10.1063/1.113855
George Kirkman, B. Jiang, Nicholas Reinhardt
{"title":"A high brightness electron beam produced by a ferroelectric cathode","authors":"George Kirkman, B. Jiang, Nicholas Reinhardt","doi":"10.1063/1.113855","DOIUrl":"https://doi.org/10.1063/1.113855","url":null,"abstract":"We report experimental measurements of the brightness of an electron beam produced by a ferroelectric cathode. The brightness value of B/sub n/ = 1.2x10/sup 1/1 A/m/sup 2/ rad/sup 2/ for a 15A, 1OkV beam exceeds that obtained from thermionic cathodes operating at comparable voltages. To our knowledge, these are the first reported measurements of the beam quality (emittance and brightness) of the electron beam from a ferroelectric cathode.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126968489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 47
A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs LOCOS-和沟槽隔离mosfet热载子光发射的二维分析
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1993-11-25 DOI: 10.1109/IEDM.1992.307416
T. Ohzone, H. Iwata, Y. Uraoka, S. Odanaka
{"title":"A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs","authors":"T. Ohzone, H. Iwata, Y. Uraoka, S. Odanaka","doi":"10.1109/IEDM.1992.307416","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307416","url":null,"abstract":"A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116016764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Phase-shifting mask topography effects on lithographic image quality 相移掩模地形对光刻图像质量的影响
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1993-08-08 DOI: 10.1109/IEDM.1992.307307
C. Pierrat, A. Wong, S. Vaidya
{"title":"Phase-shifting mask topography effects on lithographic image quality","authors":"C. Pierrat, A. Wong, S. Vaidya","doi":"10.1109/IEDM.1992.307307","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307307","url":null,"abstract":"The impact of phase-shifting mask topography on wafer exposure was studied via simulations and experimentation using phase-shifting masks fabricated by etching the quartz to define the shifted areas. The influence of the refractive index of the chromium layer and of the profile of the chromium patterns was shown to be minimal. On the other hand, the quartz profiles have a large impact on the wafer results. For vertical quartz profiles, the intensity of the light going through the etched portion of the mask is lower than that going through the unetched portion of the mask and varies with feature size. This problem can be addressed either by optimizing the quartz profiles or by biasing the size of the features depending on the type of pattern.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117279399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD 一种采用选择性TEOS-Ozone APCVD的全平面化多层互连技术
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1992-12-13 DOI: 10.1109/IEDM.1992.307363
M. Suzuki, T. Homma, H. Koga, T. Tanigawa, Y. Murao
{"title":"A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD","authors":"M. Suzuki, T. Homma, H. Koga, T. Tanigawa, Y. Murao","doi":"10.1109/IEDM.1992.307363","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307363","url":null,"abstract":"A new interlayer dielectric film planarization technology for sub-half-micron multilevel interconnections has been developed. This technology utilizes a new selective TEOS-Ozone APCVD SiO/sub 2/ film formation technique which can be realized by differences in surface adsorption properties and flow characteristics of siloxane oligomers. The deposition rate can be reduced by putting Ti or its alloy metal films such as TiN and TiW on top of Al wirings. These metal films can reduce the oligomer adsorption and assist the oligomer flow into the spacings between Al wirings. Furthermore, the selectivity is enhanced by a CF/sub 4/ gas plasma pre-treatment, even on top of the W films. The TEOS-Ozone APCVD SiO/sub 2/ films deposited on the Ti/Al, TiN/Al, TiW/Al or W/Al wirings with the CF/sub 4/ pre-treatment were more than 40% thinner than those on PECVD SiO/sub 2/ under-layers. Higher capability for both local and global planarization of interlayer dielectrics was confirmed in a multilevel metallization scheme in the double-level Al interconnection technology with the 0.6 mu m design rule and in a prototype 64M DRAM fabrications.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116690764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A quarter-micron planarized interconnection technology with self-aligned plug 一种四分之一微米平面自对准插头互连技术
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1992-12-01 DOI: 10.1109/IEDM.1992.307366
K. Ueno, K. Ohto, K. Tsunenari, K. Kajiyana, K. Kikuta, T. Kikkawa
{"title":"A quarter-micron planarized interconnection technology with self-aligned plug","authors":"K. Ueno, K. Ohto, K. Tsunenari, K. Kajiyana, K. Kikuta, T. Kikkawa","doi":"10.1109/IEDM.1992.307366","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307366","url":null,"abstract":"In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO/sub 2/ as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128630212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Kinetics of high concentration arsenic deactivation at moderate to low temperatures 中低温下高浓度砷失活动力学
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1992-10-14 DOI: 10.1109/IEDM.1992.307400
S. Luning, P. Rousseau, P. Griffin, P. Carey, J. Plummer
{"title":"Kinetics of high concentration arsenic deactivation at moderate to low temperatures","authors":"S. Luning, P. Rousseau, P. Griffin, P. Carey, J. Plummer","doi":"10.1109/IEDM.1992.307400","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307400","url":null,"abstract":"This work investigates the kinetics of arsenic deactivation at temperatures from 500 to 800 degrees C and for concentrations between 1*10/sup 20/ and 1*10/sup 21//cm/sup 3/. Using profiles created by repeated laser melt annealing, we determine mobility as a function of both active and inactive dopant concentration and then characterize the dynamics of carrier deactivation. We observe retrograde resistivity versus concentration at high doses, which is explained by a mobility reduction due to the inactive arsenic and by retrograde electrical activity of the dopant itself.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123808427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
High-power second harmonic gyro-TWT amplifier 大功率二次谐波陀螺-行波管放大器
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1992-05-25 DOI: 10.1109/IEDM.1992.307343
Q. Wang, D. Mcdermott, C. Kou, A. T. Lin, K. Chu, N. Luhmann, J. Pretterebner
{"title":"High-power second harmonic gyro-TWT amplifier","authors":"Q. Wang, D. Mcdermott, C. Kou, A. T. Lin, K. Chu, N. Luhmann, J. Pretterebner","doi":"10.1109/IEDM.1992.307343","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307343","url":null,"abstract":"An extremely high power three-section second-harmonic 35 GHz gyro-TWT has been designed with a self-consistent nonlinear simulation code (1). An output power of 530 kW with 21% efficiency, 54 dB gain and 6% bandwidth is predicted. To substantiate the claim that a harmonic gyro-TWT can generate significantly higher output power with better stability than fundamental gyro-TWTs due to the higher beam currents allowed for the weaker harmonic interaction, a proof-of-principle Ku-band experiment is being constructed at UCLA with comparable performance predicted. A single anode 100 kV, 20 A MIG is being built to generate the alpha = upsilon /sub perpendicular to // upsilon /sub ///=1 electron beam with Delta upsilon /sub //// upsilon /sub ///=8%.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126269894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A high-C capacitor (20.4 fF/ mu m/sup 2/) with ultrathin CVD-Ta/sub 2/O/sub 5/ films deposited on rugged poly-Si for high density DRAMs 一种高c电容器(20.4 fF/ μ m/sup 2/)，超薄CVD-Ta/sub 2/O/sub 5/薄膜沉积在坚固的多晶硅上，用于高密度dram
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307356
P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong
{"title":"A high-C capacitor (20.4 fF/ mu m/sup 2/) with ultrathin CVD-Ta/sub 2/O/sub 5/ films deposited on rugged poly-Si for high density DRAMs","authors":"P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong","doi":"10.1109/IEDM.1992.307356","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307356","url":null,"abstract":"Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114983964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs 超高压AlGaAs/InGaAs伪晶功率hemt
1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI: 10.1109/IEDM.1992.307369
M. Kao, S. Fu, P. Ho, P. Smith, P. Chao, K. Nordheden, Sujane C. Wang
{"title":"Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs","authors":"M. Kao, S. Fu, P. Ho, P. Smith, P. Chao, K. Nordheden, Sujane C. Wang","doi":"10.1109/IEDM.1992.307369","DOIUrl":"https://doi.org/10.1109/IEDM.1992.307369","url":null,"abstract":"This paper reports the development of double recessed pseudomorphic GaAs High Electron Mobility Transistors (HEMTs) for high voltage operation. The GaAs-based power HEMT with 0.25 mu m gate-length exhibited a gate to drain breakdown voltage of 30 volts, a peak g/sub m/ of 510 mS/mm, and a maximum current density of 540 mA/mm. When biased to 14 volts on the drain, the 400 mu m wide HEMT delivered 505 mW (1.26 W/mm) output power at 4.5 GHz. This is the highest output power density and drain-source operating voltage ever reported for HEMT devices. The device also showed excellent 4.5 and 10 GHz power performance combination (power gain, power density, power-added efficiency) at V/sub ds/=8V. The significant extension of device drain bias range as well as increase in the product of current density and breakdown voltage were attributed to the adoption of channel recess using reactive ion etching.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114655462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信