A two-dimensional analysis of hot-carrier photoemission from LOCOS- and trench-isolated MOSFETs

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1993-11-25 DOI:10.1109/IEDM.1992.307416

T. Ohzone, H. Iwata, Y. Uraoka, S. Odanaka

引用次数: 9

Abstract

A two-dimensional (2-D) photoemission analysis of hot-carrier effects in LOCOS- and trench-isolated CMOS devices is described. Photoemission-intensity profiles and photon-energy distributions can be measured in spatial resolution of 0.1 mu m. This technology reveals the 2-D edge effect of photoemission-intensity depending on isolation technology. The significant difference of photoemission characteristics is observed in LOCOS- and trench-isolated n-MOSFETs.<>

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LOCOS-和沟槽隔离mosfet热载子光发射的二维分析

描述了LOCOS和沟槽隔离CMOS器件中热载子效应的二维(2-D)光电发射分析。该技术可以在0.1 μ m的空间分辨率下测量光强分布和光子能量分布。该技术揭示了依赖于隔离技术的光强二维边缘效应。在LOCOS- n- mosfet和沟槽隔离n- mosfet中观察到光电特性的显著差异。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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