A fully planarized multilevel interconnection technology using selective TEOS-Ozone APCVD

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1992-12-13 DOI:10.1109/IEDM.1992.307363

M. Suzuki, T. Homma, H. Koga, T. Tanigawa, Y. Murao

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引用次数: 1

Abstract

A new interlayer dielectric film planarization technology for sub-half-micron multilevel interconnections has been developed. This technology utilizes a new selective TEOS-Ozone APCVD SiO/sub 2/ film formation technique which can be realized by differences in surface adsorption properties and flow characteristics of siloxane oligomers. The deposition rate can be reduced by putting Ti or its alloy metal films such as TiN and TiW on top of Al wirings. These metal films can reduce the oligomer adsorption and assist the oligomer flow into the spacings between Al wirings. Furthermore, the selectivity is enhanced by a CF/sub 4/ gas plasma pre-treatment, even on top of the W films. The TEOS-Ozone APCVD SiO/sub 2/ films deposited on the Ti/Al, TiN/Al, TiW/Al or W/Al wirings with the CF/sub 4/ pre-treatment were more than 40% thinner than those on PECVD SiO/sub 2/ under-layers. Higher capability for both local and global planarization of interlayer dielectrics was confirmed in a multilevel metallization scheme in the double-level Al interconnection technology with the 0.6 mu m design rule and in a prototype 64M DRAM fabrications.<>

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一种采用选择性TEOS-Ozone APCVD的全平面化多层互连技术

提出了一种用于亚半微米多层互连的层间介质膜平面化新技术。该技术采用了一种新的选择性正硅氧烷-臭氧APCVD SiO/sub 2/膜形成技术，该技术可以通过硅氧烷低聚物的表面吸附性能和流动特性的差异来实现。将Ti或其合金金属薄膜(如TiN和TiW)涂覆在Al导线上可以降低沉积速率。这些金属薄膜可以减少低聚物的吸附，并帮助低聚物流入铝导线之间的间隙。此外，通过CF/sub - 4/气等离子体预处理，选择性得到了提高，即使是在W膜的顶部。经CF/sub - 4/预处理后，在Ti/Al、TiN/Al、TiW/Al或W/Al上沉积的TEOS-Ozone APCVD SiO/sub - 2/薄膜比PECVD SiO/sub - 2/下层薄40%以上。在设计规则为0.6 μ m的双级Al互连技术中的多层金属化方案和原型64M DRAM制造中，证实了层间介电体局部和全局平面化的更高能力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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1992 International Technical Digest on Electron Devices Meeting

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