具有横向漏波导结构的超高量子效率的AlGaInP可见激光二极管

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307495

I. Kidoguchi, S. Kamiyama, M. Mannoh, J. Hoshina, H. Ohta, A. Ishibashi, Y. Ban, K. Ohnaka

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摘要

本文首次展示了具有侧漏波导结构的AlGaInP可见激光二极管。该激光器除具有基模-横模稳定性外，还具有高达43%的单面微分量子效率。高差分量子效率是由于该激光器的低传播损耗

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AlGaInP visible laser diode with extremely high quantum efficiency having lateral leaky waveguide structure

AlGaInP visible laser diode with lateral leaky waveguide structure has been demonstrated for the first time. The laser has differential quantum efficiency as high as 43% from one facet in addition to fundamental-transverse-mode stability without facet coating. The high differential quantum efficiency is due to the low propagation loss of this laser.<>

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来源期刊

1992 International Technical Digest on Electron Devices Meeting

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