MOSFET热载流子可靠性建模:什么是必要的，什么是可能的?

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307459

W. Hansch

{"title":"MOSFET热载流子可靠性建模:什么是必要的，什么是可能的?","authors":"W. Hansch","doi":"10.1109/IEDM.1992.307459","DOIUrl":null,"url":null,"abstract":"The components of a simulation tool for a self-consistent calculation of DC hot electron device degradation are discussed. The tool is based on the drift diffusion approximation including one of its generalizations. It includes carrier injection into the gate oxide, trapping and detrapping of oxide charges and interface states, and their feed back onto the device field.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Modeling hot carrier reliability of MOSFET: what is necessary and what is possible?\",\"authors\":\"W. Hansch\",\"doi\":\"10.1109/IEDM.1992.307459\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The components of a simulation tool for a self-consistent calculation of DC hot electron device degradation are discussed. The tool is based on the drift diffusion approximation including one of its generalizations. It includes carrier injection into the gate oxide, trapping and detrapping of oxide charges and interface states, and their feed back onto the device field.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307459\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307459","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

讨论了直流热电子器件退化自一致计算模拟工具的组成。该工具是基于漂移扩散近似，包括它的一个推广。它包括向栅极氧化物注入载流子，捕获和去除氧化物电荷和界面态，并将它们反馈到器件场。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling hot carrier reliability of MOSFET: what is necessary and what is possible?

The components of a simulation tool for a self-consistent calculation of DC hot electron device degradation are discussed. The tool is based on the drift diffusion approximation including one of its generalizations. It includes carrier injection into the gate oxide, trapping and detrapping of oxide charges and interface states, and their feed back onto the device field.<>

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1992 International Technical Digest on Electron Devices Meeting

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