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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

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A 10–67-GHz CMOS step attenuator with improved flatness and large attenuation range 一种10 - 67 ghz CMOS阶跃衰减器，具有改进的平坦度和大衰减范围
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489438
J. Bae, Jaeyoung Lee, C. Nguyen
{"title":"A 10–67-GHz CMOS step attenuator with improved flatness and large attenuation range","authors":"J. Bae, Jaeyoung Lee, C. Nguyen","doi":"10.1109/SIRF.2013.6489438","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489438","url":null,"abstract":"A four-bit CMOS step attenuator is designed using a new design method to achieve improved flatness and large attenuation range from 10-67 GHz. The design method is based on the frequency-response characteristics of the conventional Pi-, T-, and distributed attenuators. Over 10-67 GHz, the measured results exhibit attenuation flatness of 6.8 dB and attenuation range of 32-42 dB.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"31 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130715436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
SOI FinFET compact model for RF circuits simulation 用于射频电路仿真的SOI FinFET紧凑模型
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489441
J. Alvarado, J. Tinoco, S. Salas, A. G. Martinez-Lopez, B. Soto-Cruz, A. Cerdeira, J. Raskin
{"title":"SOI FinFET compact model for RF circuits simulation","authors":"J. Alvarado, J. Tinoco, S. Salas, A. G. Martinez-Lopez, B. Soto-Cruz, A. Cerdeira, J. Raskin","doi":"10.1109/SIRF.2013.6489441","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489441","url":null,"abstract":"A methodology to properly establish an accurate SOI FinFET compact model through SPICE simulator is presented. This compact model is implemented in Verilog-A to simulate the performance of RF circuits based on SOI FinFET technology. It predicts well static behavior of the transistor and circuit, as well as their small-signal RF behavior by modeling the intrinsic capacitances and also the effects of the gate resistance and the extrinsic gate capacitances. Finally, the comparison between the simulated and measured performance of a Low Noise Amplifier demonstrates the validity and the capabilities of this compact model to simulate the dc and RF behavior of RF circuits.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123031275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
ICI of time-reversal UWB-IR communication 时间反转UWB-IR通信的ICI
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/PAWR.2013.6490207
Zhenyang He, H. Ishikawa, R. Nakamura, A. Kajiwara
{"title":"ICI of time-reversal UWB-IR communication","authors":"Zhenyang He, H. Ishikawa, R. Nakamura, A. Kajiwara","doi":"10.1109/PAWR.2013.6490207","DOIUrl":"https://doi.org/10.1109/PAWR.2013.6490207","url":null,"abstract":"Recently, ultra-wideband impulse radio (UWB-IR) has attracted considerable attention in short-range communications because it offers small-size, low power consumption and gigabit data transmission. Rake reception should be necessary to attain the required Eb/N0 because of the limited transmit power emission, but it will be unacceptable for the terminal. Therefore, the use of time-reversal UWB-IR (TiR) scheme at the access-point side has been suggested as a promising solution to achieve Rake diversity combining. The TiR is expected to be used in multi-cell channel, but the inter-cell interference (ICI) has not investigated. In this paper, the ICI of TiR is experimentally investigated and compared with a conventional UWB-IR. Ray-Tracing based computer simulation also is done to show good agreement with experiment. As a result, the effect of ICI is found to be suppressed by using the TiR scheme.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115139016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An electrically-small, 3-D cube antenna fabricated with additive manufacturing 用增材制造技术制造的一种电子小的三维立方体天线
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486708
I. Nassar, T. Weller
{"title":"An electrically-small, 3-D cube antenna fabricated with additive manufacturing","authors":"I. Nassar, T. Weller","doi":"10.1109/RWS.2013.6486708","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486708","url":null,"abstract":"This paper presents the design of an electrically small, 3-D cube antenna that is fabricated using laser-based layer-by-Iayer stereolithography processing (SLA). The antenna consists of a balun and a half-wave dipole with meandered-line portions, all of which are patterned on the surface of a cube. The antenna operational frequency is 2.45 GHz and its measured 10 dB return loss bandwidth is 3.75%. Ka of the proposed design is 0.73 and its measured gain is -0.5 dBi. The gain is decreased by 2.5 dB compared with a previous prototype made with printed circuit board (PCB) technology using a commercial microwave substrate. However, the SLA fabrication approach significantly improves the manufacturing repeatability.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127252989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system 一种用于恒包络调制系统的CMOS e类功率放大器，在5 GHz频率下具有40%的PAE
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489434
Y. Yamashita, D. Kanemoto, H. Kanaya, R. Pokharel, K. Yoshida
{"title":"A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system","authors":"Y. Yamashita, D. Kanemoto, H. Kanaya, R. Pokharel, K. Yoshida","doi":"10.1109/SIRF.2013.6489434","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489434","url":null,"abstract":"This paper describes the design of a high-efficient class-E power amplifier (PA) for 5-GHz wireless transmitter applications using constant envelope modulation scheme in a 0.18-μm CMOS technology. The proposed class-E PA employs injection-locking technique to reduce required input power. Furthermore, cascode topology is utilized for the proposed PA in order to reduce device stress and parasitic capacitances. The proposed PA delivers 15.4-dBm saturated output power at 5.0 GHz with 40.6-% maximum power-added efficiency (PAE) for measurement.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131247812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
RF multicarrier signaling and antenna systems for low SNR broadband underwater communications 低信噪比宽带水下通信射频多载波信令和天线系统
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486734
B. Kelley, K. Naishadham
{"title":"RF multicarrier signaling and antenna systems for low SNR broadband underwater communications","authors":"B. Kelley, K. Naishadham","doi":"10.1109/RWS.2013.6486734","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486734","url":null,"abstract":"Most traditional underwater communication systems rely upon low data-rate acoustic communications, which cannot propagate behind objects and is confined to very narrow-band channels. We propose an alternative method supporting robust broadband radio frequency (RF) communications in low signal-to-noise ratio (SNR) undersea environments. This paper presents an integrated treatment involving broadband RF antennas and digital radio systems, potentially enabling 1 Mbps underwater communications at a medium range of 100 to 1000 meters. We describe the broadband underwater antenna design results coupled with the application of spectrally efficient multi-carrier modulation and iterative message-passing low-density parity check codes. We also present the channel modeling and underwater link-level simulation results at 5 MHz, 10 MHz, and 15 MHz bandwidths.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123383333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors 面向低成本122 GHz和245 GHz雷达传感器集成天线的毫米波片上系统
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489494
J. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler
{"title":"Towards mm-wave System-On-Chip with integrated antennas for low-cost 122 and 245 GHz radar sensors","authors":"J. Scheytt, Y. Sun, K. Schmalz, Y. Mao, R. Wang, W. Debski, W. Winkler","doi":"10.1109/SIRF.2013.6489494","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489494","url":null,"abstract":"Complex integrated 122 and 245 GHz SiGe BiCMOS transceiver ICs as well as an efficient broadband on-chip antenna are presented. The ICs target radar and sensing applications for the ISM bands at 122 and 245 GHz. Due to high level of integration and basic mm-wave self-testing production as well as test cost are dramatically reduced. Furthermore a compact and efficient on-chip antenna allows for chip-on-board mounting without RF interfaces.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123656865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A pHEMT power amplfier with an on-off modulator 带开关调制器的pHEMT功率放大器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489427
Hao-Shun Yang, Li-Wei Lin, Y.‐J.E. Chen
{"title":"A pHEMT power amplfier with an on-off modulator","authors":"Hao-Shun Yang, Li-Wei Lin, Y.‐J.E. Chen","doi":"10.1109/SIRF.2013.6489427","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489427","url":null,"abstract":"This paper presents a transformer-based switching-type RF power amplifier with an on-off modulator using a 0.15-μm pHEMT process. In order to overcome the inherent limitation of ground potential at the source node of transistor models in this pHEMT process, an on-off modulator was designed for the proposed pulse-modulated polar transmitter system. Measurement using a single-tone signal at 2.2 GHz and a 3.8-V supply, this pHEMT power amplifier with the proposed on-off modulator under full turn-on condition achieves 50.1% efficiency at 26.7-dBm output power level. Moreover, it achieves 45.3% efficiency at 23.7 -dBm output power level under the half turn-on condition. Furthermore, the isolation of this system at the peak output power level under full turn-off condition is 23.3 dB which is much better than using gate bias control to switch the cell of power transistors.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124937993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene RF transistors with buried bottom gate 埋底栅极的石墨烯射频晶体管
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489440
Dong-Wook Park, Tzu-Hsuan Chang, S. Mikael, Jung‐Hun Seo, P. Nealey, Z. Ma
{"title":"Graphene RF transistors with buried bottom gate","authors":"Dong-Wook Park, Tzu-Hsuan Chang, S. Mikael, Jung‐Hun Seo, P. Nealey, Z. Ma","doi":"10.1109/SIRF.2013.6489440","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489440","url":null,"abstract":"To improve process induced mobility degradation of graphene, radio frequency (RF) transistors with buried bottom gates have been fabricated and characterized. In this process, graphene is transferred to the top of finished gates and source/drains as almost the very last step of the entire fabrication process. A unit graphene transistor shows the on-current of 130 μA/μm the I<sub>on</sub>/I<sub>off</sub> ratio of 5.31, and the maximum transconductance of 6.85μS/μm at V<sub>D</sub>= 0.1 V. The graphene RF transistor with a channel length of 600 nm shows a maximum oscillation frequency (f<sub>max</sub>) of 13 GHz and a cut-off frequency (f<sub>T</sub>) of 2 GHz after de-embedding. The higher f<sub>max</sub> than f<sub>T</sub> is due to less source-drain resistance (R<sub>DS</sub>) made by a fully-covered channel region by the buried gate. Because of the higher f<sub>max</sub> the proposed device structure can be a promising candidate for graphene RF transistors and RF amplifiers.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"417 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124184494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Reconstruction filter suitable for lowpass delta-sigma RF transmitters 重建滤波器适用于低通德尔塔-西格玛射频发射器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486728
Defu Wang, R. Negra
{"title":"Reconstruction filter suitable for lowpass delta-sigma RF transmitters","authors":"Defu Wang, R. Negra","doi":"10.1109/RWS.2013.6486728","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486728","url":null,"abstract":"This paper proposes a highly selective bandpass filter suitable for lowpass delta-sigma RF transmitters. The proposed filter is characterized by a low insertion loss, high selectivity and a transfer function tailored for filtering the close-up out-of-band noise of lowpass delta-sigma transmitters. The circuit design is based on a modified stub-loaded ring resonator structure. The proposed filter has been implemented and the measurements show good agreement with simulation. The proposed filter provides a fractional 3-dB bandwidth of 14.6 %, an insertion loss of less than 1.3 dB, a suppression of more than 15 dB on both sides of desired band, and a sharp cut-off frequency response.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116647568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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