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A new UWB link set-up for breast tumor detection 一种用于乳腺肿瘤检测的新型超宽带链路装置
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486714
S. Razavizadeh
{"title":"A new UWB link set-up for breast tumor detection","authors":"S. Razavizadeh","doi":"10.1109/RWS.2013.6486714","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486714","url":null,"abstract":"A conformal ultra wide band(UWB) antenna with a back reflector has been used as a main sensor of a short distance link for breast tumor detection. A two sets of conformal antenna act as a UWB link by emitting a Rayleigh pulse through the breast tissue model and after receiving the pulse by other conformal antenna we observe that the received pulse for tumor diameter size more than 6mm has been changed in with tumor in compared to without tumor. The conformal antenna is an UWB antenna with high efficient band characteristic which is presented in my previous paper [1]. The simulation results show this system can use as a first choice for prototyping a portable low cost tumor detector.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126899019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
14.4mW 10Gbps CMOS limiting amplifier with local DC offset cancellers 带有本地直流失调抵消器的14.4mW 10Gbps CMOS限制放大器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486699
K. Takano, R. Fujimoto, M. Motoyoshi, K. Katayama, M. Fujishima
{"title":"14.4mW 10Gbps CMOS limiting amplifier with local DC offset cancellers","authors":"K. Takano, R. Fujimoto, M. Motoyoshi, K. Katayama, M. Fujishima","doi":"10.1109/RWS.2013.6486699","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486699","url":null,"abstract":"A low-power limiting amplifier (LA) with DC offset cancellers (DCOCs) using local feedback loops is presented for D-band wireless transceivers. The number of cascaded stages of amplifiers is set to minimize the gain-bandwidth product (GBW) of each amplifier that has the required bandwidth to realize low power dissipation. The capacitance used in each DCOC is reduced by the local feedback loops. In addition, the area used by the capacitors in each DCOC is reduced by arranging metal-oxide-metal (MOM) capacitors on MOS capacitors. Moreover, a push-pull-type topology using only NMOSs is used as an output buffer to reduce the power dissipation. Furthermore, an inductive peaking technique is used for amplifiers to realize a large bandwidth. The proposed LA has been fabricated by a 40nm CMOS process. It has a differential voltage gain of 45dB, a bandwidth of approximately 6.5GHz, a power dissipation of 14.4mW, and a circuit area of 0.15mm2. It can operate with a data rate of 10Gbps.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129066828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI SP9T蜂窝天线开关在2.5 V CMOS薄膜SOI
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486702
V. Blaschke, A. Unikovski, P. Hurwitz, S. Chaudhry
{"title":"A SP9T cellular antenna switch in 2.5 V CMOS thin-film SOI","authors":"V. Blaschke, A. Unikovski, P. Hurwitz, S. Chaudhry","doi":"10.1109/RWS.2013.6486702","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486702","url":null,"abstract":"This paper presents the results of a compact wire-bond SP9T antenna switch that was designed as technology demonstrator for a 2.5 V CMOS, 250 fs Ron-Coff thin-film SOI process. Through “layout-driven” circuit design, a small die size of 1.52 mm2 was achieved for a fully integrated switch die containing RF-section I/O pads, ESD, decoder, level shifters and dual frequency charge pump to generate negative vss. The dual frequency charge pump was a requirement to achieve a fast start-up time of 10 μs and switch rise times of 3 μs. A low insertion loss of 0.42 dB for cellular low-band at 915 MHz and 0.55 dB for cellular high-band at 1910 MHz, harmonic powers better -76 dBc over battery and Band I/V IMD3 of -110 dBm were achieved. All ports show a high ESD tolerance of 2 kV HBM.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"5 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131103277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
NARMA-based linearization of RF power amplifiers with non-monotonic response under dynamic hardware reconfiguration 基于narma的非单调响应射频功率放大器的动态硬件重构线性化
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489429
A. Thibodeau, A. Kouki, N. Constantin
{"title":"NARMA-based linearization of RF power amplifiers with non-monotonic response under dynamic hardware reconfiguration","authors":"A. Thibodeau, A. Kouki, N. Constantin","doi":"10.1109/SIRF.2013.6489429","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489429","url":null,"abstract":"This paper presents a signal processing block intended for a NARMA-based linearization of an RF power amplifier that exhibits a non-monotonic voltage response. This type of response may be obtained when applying a dynamic hardware reconfiguration of the amplifier for power efficiency improvement, through the activation or deactivation of sections in the RF transistor arrays or the electronic tuning of the bias circuits and the impedance matching circuits, as a function of the instantaneous envelope power of the modulated RF signal. A reconfigurable power amplifier design is described as an example of conditions that introduce a non-monotonic voltage response. The need, in that case, to introduce a new function inversion process for NARMA-based predistortion, is highlighted and explained. The proposed inversion process is described mathematically and validated through a power amplifier linearization example.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125362697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications 用于SoC应用的商用200 mm富阱HR-SOI晶圆的射频和线性性能
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489417
C. Neve, K. Ben Alia, C. Malaquin, F. Allibert, E. Desbonnets, I. Bertrand, W. Van Den Daele, J. Raskin
{"title":"RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers for SoC applications","authors":"C. Neve, K. Ben Alia, C. Malaquin, F. Allibert, E. Desbonnets, I. Bertrand, W. Van Den Daele, J. Raskin","doi":"10.1109/SIRF.2013.6489417","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489417","url":null,"abstract":"We present for the first time the RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers. These wafers are fully compatible with the thermal budget of CMOS process. The investigated SOI wafers with a fixed BOX of 400 nm-thick show effective resistivity values higher than 4 kΩ-cm and harmonic distortion levels lower than -81 dBm for a 900 MHz input signal with +15 dBm, i.e. more than 95 dBc. Our investigations confirm the capability of trap-rich HR-SOI wafer for the integration of RF systems in Si.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131134192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A 36–49 GHz injection-locked frequency divider with transformer-based dual-path injection 基于变压器的双路注入的36-49 GHz注入锁定分频器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489450
R. Shu, V. Subramanian, A. Hamidian, A. Malignaggi, M. K. Ali, G. Boeck
{"title":"A 36–49 GHz injection-locked frequency divider with transformer-based dual-path injection","authors":"R. Shu, V. Subramanian, A. Hamidian, A. Malignaggi, M. K. Ali, G. Boeck","doi":"10.1109/SIRF.2013.6489450","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489450","url":null,"abstract":"In this work, a Q-band injection-locked frequency divider (ILFD) has been implemented in 90 nm CMOS technology. An ILFD topology of transformer-based dual-path injection was proposed to maximize the power gain of the injection path and improve the locking range of the ILFD. On-wafer measurements showed that with 0 dBm input power, the proposed ILFD achieves a 30.5 % locking range from 36 GHz to 49 GHz and consumes only 2.64 mW with a 1.2 V power supply.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128093893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Doppler radar sensor for occupancy monitoring 用于占用监测的多普勒雷达传感器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489484
E. Yavari, Hsun Jou, V. Lubecke, O. Boric-Lubecke
{"title":"Doppler radar sensor for occupancy monitoring","authors":"E. Yavari, Hsun Jou, V. Lubecke, O. Boric-Lubecke","doi":"10.1109/SIRF.2013.6489484","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489484","url":null,"abstract":"This paper investigates the use of Doppler radar sensor for occupancy monitoring. The feasibility of true presence is explored with Doppler radar occupancy sensors to overcome the limitations of the common occupancy sensors. The common occupancy sensors are more of a motion sensor than a presence detector. Existing cost effective off the shelf System-on-Chip CC2530 RF transceiver is used for developing the radio. The transmitter sends continuous wave signal at 2.405 GHz. Different levels of activity is detected by post-processing sensor signals. Heart and respiratory signals are extracted in order to improve stationary subject detection.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134295583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multi-gigabit 60 GHz OOK front-end in 90 nm CMOS 采用90纳米CMOS的多千兆60 GHz OOK前端
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489444
A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck
{"title":"Multi-gigabit 60 GHz OOK front-end in 90 nm CMOS","authors":"A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck","doi":"10.1109/SIRF.2013.6489444","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489444","url":null,"abstract":"In this work an on-off shift keying transmitter front-end for 60 GHz wireless communication is presented. To enhance the transmitter performance, a novel modulator topology is implemented. Designed and fabricated in 90 nm CMOS, the transmitter occupies 0.38 mm2 and provides 8 dBm output power with 36 mW DC power consumption. The transmitter measurement in a complete 60 GHz wireless set-up showed more than 6 Gbit/s data rate over 4 m distance.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117309182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
60GHz transmitter front-end in 40nm LP-CMOS with improved back-off efficiency 60GHz发射器前端采用40nm LP-CMOS，提高了后退效率
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489414
K. Khalaf, V. Vidojkovic, K. Vaesen, B. Parvais, J. Long, P. Wambacq
{"title":"60GHz transmitter front-end in 40nm LP-CMOS with improved back-off efficiency","authors":"K. Khalaf, V. Vidojkovic, K. Vaesen, B. Parvais, J. Long, P. Wambacq","doi":"10.1109/SIRF.2013.6489414","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489414","url":null,"abstract":"A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAM-16 signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (P-1dB) are 22dB and 10.2dBm respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of P-1dB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116274885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A K-band CMOS monopulse comparator incorporating the phase-invertible variable attenuator 一种含相位可逆可变衰减器的k波段CMOS单脉冲比较器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489495
Hsien-Shun Wu, Chao-Wei Wang, Jianguo Ma, Ching-Kuang C. Tzuang
{"title":"A K-band CMOS monopulse comparator incorporating the phase-invertible variable attenuator","authors":"Hsien-Shun Wu, Chao-Wei Wang, Jianguo Ma, Ching-Kuang C. Tzuang","doi":"10.1109/SIRF.2013.6489495","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489495","url":null,"abstract":"This paper presents the monopulse comparator incorporating with the phase-invertible variable attenuator (PIVA). The sum and difference patterns are synthesized by combining two outputs of the attenuators after setting the transmission coefficients with the in-phase and out-of-phase shifting. The prototype is designed and fabricated by using CMOS 0.13-μm 1P8M technology. The prototype consumes 12mW from 1.2V. The measured results show that the gain of each signal-path is 4.88 dB at 24 GHz. The input PldB is -7 dBm and the sum/difference ratio is 25 dB.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114959886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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