60GHz发射器前端采用40nm LP-CMOS，提高了后退效率

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/SIRF.2013.6489414

K. Khalaf, V. Vidojkovic, K. Vaesen, B. Parvais, J. Long, P. Wambacq

{"title":"60GHz发射器前端采用40nm LP-CMOS，提高了后退效率","authors":"K. Khalaf, V. Vidojkovic, K. Vaesen, B. Parvais, J. Long, P. Wambacq","doi":"10.1109/SIRF.2013.6489414","DOIUrl":null,"url":null,"abstract":"A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAM-16 signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (P-1dB) are 22dB and 10.2dBm respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of P-1dB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"60GHz transmitter front-end in 40nm LP-CMOS with improved back-off efficiency\",\"authors\":\"K. Khalaf, V. Vidojkovic, K. Vaesen, B. Parvais, J. Long, P. Wambacq\",\"doi\":\"10.1109/SIRF.2013.6489414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAM-16 signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (P-1dB) are 22dB and 10.2dBm respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of P-1dB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2013.6489414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2013.6489414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用40nm LP-CMOS技术实现了一个三级变压器耦合ab类功率放大器(PA)和一个基于超级源跟踪器的I-Q上变频混频器。发射机(Tx)前端设计用于60GHz的多gbps QPSK/QAM-16信号传输，提高了回退效率。它在5dB后退时达到5.7%的功率附加效率(PAE)，总功耗仅为90mW。功率增益和输出1dB压缩点(P-1dB)分别为22dB和10.2dBm。第二个Tx前端，基于A级PA和吉尔伯特单元上转换混频器，被设计为比较的基准。在P-1dB值相似的情况下，ab类样机在5dB后退时的PAE比基准Tx高3倍，总功耗比基准Tx低100mW。

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60GHz transmitter front-end in 40nm LP-CMOS with improved back-off efficiency

A three-stage, transformer-coupled class-AB power amplifier (PA) and a super source-follower-based I-Q upconversion mixer are implemented in 40nm LP-CMOS technology. The transmitter (Tx) front-end is designed for multi-Gbps QPSK/QAM-16 signal transmission at 60GHz with improved back-off efficiency. It achieves 5.7% power-added efficiency (PAE) at 5dB back-off with a total power consumption of only 90mW. Power gain and output 1dB compression point (P-1dB) are 22dB and 10.2dBm respectively. A second Tx front-end, based on a class-A PA and Gilbert-cell upconversion mixer, is designed as a benchmark for comparison. With a similar value of P-1dB, PAE of the class-AB prototype at 5dB back-off is three times higher and the total power consumption is 100mW lower than the benchmark Tx.

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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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