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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

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A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS 在45nm SOI CMOS中，17dbm Psat的w波段堆叠FET功率放大器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-09-30 DOI: 10.1109/BioWireleSS.2013.6613681
J. Jayamon, A. Agah, B. Hanafi, H. Dabag, J. Buckwalter, P. Asbeck
{"title":"A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS","authors":"J. Jayamon, A. Agah, B. Hanafi, H. Dabag, J. Buckwalter, P. Asbeck","doi":"10.1109/BioWireleSS.2013.6613681","DOIUrl":"https://doi.org/10.1109/BioWireleSS.2013.6613681","url":null,"abstract":"A 90GHz power amplifier implemented with three series-connected (stacked) FETs in 45-nm SOI CMOS is reported. Stacking FETs allows increasing voltage handling capability of circuits with highly scaled CMOS transistors. This work shows for the first time that the stacking strategy is effective up to W band. The amplifier achieves power gain of 8 dB at 91 GHz with 3 dB bandwidth of 18 GHz using a supply voltage of 4.2 V. It delivers saturated output power of 17.3 dBm in 88-90 GHz range with peak PAE of 9 %. The PA chip occupies 0.256 mm2 including the pads. This chip demonstrates the highest output power from a CMOS PA in this frequency regime.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133795988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A CMOS fully integrated antenna system transceiver with beam-formability for millimeter-wave active imaging 一种用于毫米波有源成像的具有波束形成能力的CMOS全集成天线系统收发器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489453
N. Khanh, K. Asada
{"title":"A CMOS fully integrated antenna system transceiver with beam-formability for millimeter-wave active imaging","authors":"N. Khanh, K. Asada","doi":"10.1109/SIRF.2013.6489453","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489453","url":null,"abstract":"This paper presents the performance of a 65-nm CMOS antenna system transceiver with digital beam-formability for mm-wave active imaging. The 8-antenna array transmitter (Tx) has an ability of on-chip pulse delay calibration as our previous work. We developed the receiver (Rx) chip by employing FET direct power detection circuit including an on-chip antenna, low-pass filter and a 3-stage amplifier. Pulse delay calibration of the Tx is digitally implemented. Measured Rx's output waveform after relatively aligning all Tx's pulses is 0.91 mV and 3-ns duration with a 25-mm distance between Rx and Tx. Other Rx's outputs are also measured by applying other differential delay codes of Tx and another distance to prove the system's beam-formability. Experiment results show that the transceiver can not only implement on-chip digitally transmitted-pulse calibration but also detect beam-formed pulse for active imaging in medical diagnosis applications.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124851558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Broadband InP MMICs for 120 GHz wireless data communications 用于120 GHz无线数据通信的宽带InP mmic
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486637
T. Kosugi, Hiroyuki Takahashi, A. Hirata, K. Murata
{"title":"Broadband InP MMICs for 120 GHz wireless data communications","authors":"T. Kosugi, Hiroyuki Takahashi, A. Hirata, K. Murata","doi":"10.1109/RWS.2013.6486637","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486637","url":null,"abstract":"This paper describes Monolithic microwave integrated circuits (MMICs) and MMIC modules for 120 GHz 10-Gbps or more wireless data communications using ASK and QPSK modulation schemes. Record transmission distance of 5.8 km was established using ASK architecture MMICs at a data rate of 10-Gbps and a carrier frequency of 125 GHz. QPSK modulator and demodulator show that they performs full function in back-to-back test at a carrier frequency of 128 GHz at 10-Gbps. Furthermore, the QPSK chips was improved and integrated with low noise amplifier or power amplifier. In result, this QPSK transceiver chipset showed 22.2-Gbps error-free transmission at an output power of 7 dBm and received power -35 dBm in back-to-back measurement.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129777608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 13/24/35-GHz concurrent tri-band LNA with feedback notches 带反馈陷波的13/24/35-GHz并发三频带LNA
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489496
Jaeyoung Lee, C. Nguyen
{"title":"A 13/24/35-GHz concurrent tri-band LNA with feedback notches","authors":"Jaeyoung Lee, C. Nguyen","doi":"10.1109/SIRF.2013.6489496","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489496","url":null,"abstract":"A new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz has been designed using a novel tri-band load for stable and high stop-band rejection. The tri-band load is composed of two passive LC notch filters with feedback. The TBLNA fabricated on a 0.18-μm SiGe BiCMOS process achieves power gain of 22.3/24.6/22.2 dB at 13.5/24.5/34.5 GHz, respectively. It has the best noise figure of 3.7/3.3/4.3 dB and the IIP3 of -17.5/-18.5/-15.6 dBm, at each pass-band, respectively. The TBLNA consumes 36 mW from a 1.8 V supply, and occupies 920 μm × 500 μm.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129323607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A fully-integrated Ka-band stacked power amplifier in 45nm CMOS SOI technology 采用45nm CMOS SOI技术的全集成ka波段堆叠功率放大器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489437
Jing-Hwa Chen, S. Helmi, S. Mohammadi
{"title":"A fully-integrated Ka-band stacked power amplifier in 45nm CMOS SOI technology","authors":"Jing-Hwa Chen, S. Helmi, S. Mohammadi","doi":"10.1109/SIRF.2013.6489437","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489437","url":null,"abstract":"A fully-integrated Ka-band power amplifier (PA) designed with 2 stacked Cascode cells is implemented in 45nm CMOS SOI technology. The stack configuration overcomes the low breakdown voltages of scaled transistors and provides an output impedance close to 50 Ω. At 37 GHz, and when biased at 3.6 V, the PA delivers a saturated output power (PSAT) and a -1dB compressed output power (P1dB) of 20.2 dBm and 14.5 dBm, respectively, with a peak PAE of 11.2%. With a higher supply voltage of 4.4 V (1.1 V across each transistor), the PSAT and P1dB increase to 21.4 dBm (140 mW) and 17.5 dBm, respectively. The stack configuration allows the PA to deliver high output power at mm-wave frequencies despite the fact that each transistor is biased under a low drain-source voltage.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131885334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A retrospective on the SiGe HBT: What we do know, what we don't know, and what we would like to know better 回顾SiGe HBT:我们知道什么，我们不知道什么，以及我们想要更好地了解什么
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489439
J. Cressler
{"title":"A retrospective on the SiGe HBT: What we do know, what we don't know, and what we would like to know better","authors":"J. Cressler","doi":"10.1109/SIRF.2013.6489439","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489439","url":null,"abstract":"By any reasonable reckoning, SiGe HBT BiCMOS technology has “come of age,” as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia), multiple generational scaling nodes in production (3, soon to be 4), significant market penetration in a diverse set of performance-constrained analog, digital and RF systems, and recognized appeal for use in emerging mm-wave through near-THz electronic systems. In this retrospective on the SiGe HBT, I share a personal view of what we do know, what we don't know, and what we would like to know better, from the perspective of materials, devices, technology, circuits, and applications.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128720727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process 用于0.13-μm SiGe:C BiCMOS工艺的FMCW成像仪的宽带110 GHz四倍频器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489415
V. Valenta, A. Ulusoy, A. Trasser, H. Schumacher
{"title":"Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process","authors":"V. Valenta, A. Ulusoy, A. Trasser, H. Schumacher","doi":"10.1109/SIRF.2013.6489415","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489415","url":null,"abstract":"A high-performance 110 GHz frequency quadrupler implemented in 0.13-μm BiCMOS process is presented. The designed circuit is to be employed in an FMCW imaging radar system and is based on a cascade of two Gilbert cells with tuned loads connected as squarers. The differential input signal that is used for validation of the realized quadrupler is generated using an active on-chip balun with a limiting differential amplifier. Measurement results of the circuit prove that this approach to mm-wave frequency generation can provide operation with up to 25 GHz bandwidth along with high output power of 0 dBm.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126634286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Small and low-loss quadrature hybrid and T/R local signal selection switch for 60 GHz direct conversion transceivers 用于60 GHz直接转换收发器的小而低损耗正交混合和T/R本地信号选择开关
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489413
T. Nakatani, T. Shima, J. Sato
{"title":"Small and low-loss quadrature hybrid and T/R local signal selection switch for 60 GHz direct conversion transceivers","authors":"T. Nakatani, T. Shima, J. Sato","doi":"10.1109/SIRF.2013.6489413","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489413","url":null,"abstract":"A quadrature hybrid and a T/R selection switch of a local distribution circuit with small size and low loss are demonstrated for 60 GHz direct conversion transceivers. By applying the one-crossover parallel-line transformer and zigzag-shape capacitor, the quadrature hybrid occupies only 0.038 mm2 and the insertion losses is <; 1 dB in Ch. 1-4 (58.32-64.8 GHz). Also, using the series L/shunt L input matching network of the buffer amplifier, a small active transformer-line switch is realized, where the required length of the transmission line is 100 μm. The estimated insertion losses of <; 1.4 dB are achieved in Ch. 3-4.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133514099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications 一个26 dBm输出功率SiGe功率放大器，用于移动16 QAM LTE应用
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486698
Geunyong Lee, Jonghun Jung, Jong-In Song
{"title":"A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications","authors":"Geunyong Lee, Jonghun Jung, Jong-In Song","doi":"10.1109/RWS.2013.6486698","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486698","url":null,"abstract":"This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129363808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A high Q on-chip bondwire transformer and its application to low power receiver front-end design 一种高Q值片上键合线变压器及其在低功耗接收机前端设计中的应用
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489452
Chun-Hsing Li, C. Kuo, M. Kuo
{"title":"A high Q on-chip bondwire transformer and its application to low power receiver front-end design","authors":"Chun-Hsing Li, C. Kuo, M. Kuo","doi":"10.1109/SIRF.2013.6489452","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489452","url":null,"abstract":"This work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to-differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 μm CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"12 45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130390715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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