A retrospective on the SiGe HBT: What we do know, what we don't know, and what we would like to know better

J. Cressler
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引用次数: 24

Abstract

By any reasonable reckoning, SiGe HBT BiCMOS technology has “come of age,” as evidenced by a robust set of sources for SiGe fabrication around the world (including open foundries in the USA, Europe and Asia), multiple generational scaling nodes in production (3, soon to be 4), significant market penetration in a diverse set of performance-constrained analog, digital and RF systems, and recognized appeal for use in emerging mm-wave through near-THz electronic systems. In this retrospective on the SiGe HBT, I share a personal view of what we do know, what we don't know, and what we would like to know better, from the perspective of materials, devices, technology, circuits, and applications.
回顾SiGe HBT:我们知道什么,我们不知道什么,以及我们想要更好地了解什么
通过任何合理的计算,SiGe HBT BiCMOS技术已经“成熟”,证明了世界各地SiGe制造的强大来源(包括美国,欧洲和亚洲的开放铸造厂),生产中的多代缩放节点(3,很快将达到4),在各种性能受限的模拟,数字和RF系统中的显着市场渗透,以及在新兴毫米波到近太赫兹电子系统中使用的公认吸引力。在这次对SiGe HBT的回顾中,我从材料、设备、技术、电路和应用的角度,分享了我们所知道的、我们不知道的以及我们想要更好地了解的个人观点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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