{"title":"一个26 dBm输出功率SiGe功率放大器,用于移动16 QAM LTE应用","authors":"Geunyong Lee, Jonghun Jung, Jong-In Song","doi":"10.1109/RWS.2013.6486698","DOIUrl":null,"url":null,"abstract":"This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications\",\"authors\":\"Geunyong Lee, Jonghun Jung, Jong-In Song\",\"doi\":\"10.1109/RWS.2013.6486698\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2013.6486698\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2013.6486698","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 26 dBm output power SiGe power amplifier for mobile 16 QAM LTE applications
This paper presents a silicon germanium (SiGe) HBT power amplifier (PA) for mobile long term evolution (LTE) applications. The PA consists of a 2-stage cascade structure for high gain and 3 matching networks; input, inter-stage, and output matching network. The matching networks were designed to have a reduced insertion loss and size. The PA is fabricated using 0.35μm SiGe BiCMOS technology with a low inductance through-silicon-via (TSV). The PA a gain of 28.5dB, a PAE of 26.6%, an EVM of 2.8%, and an ACLR1 of -32.5 dBc at the output power of 26 dBm for 10MHz BW 16 QAM LTE signals.