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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

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A SiGe HBT power amplifier with integrated mode control switches for LTE applications LTE应用中集成模式控制开关的SiGe HBT功率放大器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486700
Jonghun Jung, Geunyong Lee, Jong-In Song
{"title":"A SiGe HBT power amplifier with integrated mode control switches for LTE applications","authors":"Jonghun Jung, Geunyong Lee, Jong-In Song","doi":"10.1109/RWS.2013.6486700","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486700","url":null,"abstract":"A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is controlled by NMOS switches integrated with the SiGe HBT PA. The PA shows a power added efficiency (PAE) of 28.3% and an adjacent channel leakage ration (ACLR) of -30.5dBc at the output power of 26dBm. At the low Pout of 16dBm, the PA shows a PAE of 15.8% and an ACLR of -29.7dBc. The PA shows substantially improved efficiency at low power mode operation.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128586023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A K-band SiGe bipolar VCO with transformer-coupled varactor for backhaul links 带变压器耦合变容器的k波段SiGe双极压控振荡器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489448
F. Padovan, M. Tiebout, K. Mertens, A. Bevilacqua, A. Neviani
{"title":"A K-band SiGe bipolar VCO with transformer-coupled varactor for backhaul links","authors":"F. Padovan, M. Tiebout, K. Mertens, A. Bevilacqua, A. Neviani","doi":"10.1109/SIRF.2013.6489448","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489448","url":null,"abstract":"A K-band SiGe bipolar VCO with a transformer-coupled varactor operating from 18.1 to 20.5 GHz is presented. The oscillator features a phase noise as low as -135.7 dBc/Hz at 10 MHz offset from the 19.5 GHz carrier while drawing 7 rnA from the 3.3 V supply. The VCO shows a state-of-the-art FOM of -188 dBc/Hz and an excellent FOMT of -191 dBc/Hz. The oscillator is tailored to the communication systems operating in the lower portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126984931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Holistic design of 8-way combining transformers in SiGe technology for use in millimetre-wave power amplifiers 用于毫米波功率放大器的SiGe技术8路组合变压器的整体设计
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 1900-01-01 DOI: 10.1109/SIRF.2013.6489436
M. Thian, M. Tiebout, V. Fusco
{"title":"Holistic design of 8-way combining transformers in SiGe technology for use in millimetre-wave power amplifiers","authors":"M. Thian, M. Tiebout, V. Fusco","doi":"10.1109/SIRF.2013.6489436","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489436","url":null,"abstract":"This paper presents the design of a novel 8-way power-combining transformer for use in mm-wave power amplifier (PA). The combiner exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. A complete circuit comprised of a power splitter, two-stage cascode PA array, a power combiner and input/output matching elements was designed and realized in SiGe technology. Measured gain of at least 16.8 dB was obtained from 76.4 GHz to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm OP-1dB and 14 dBm saturated output power when operated from a 3.2 V DC supply voltage at 78 GHz.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133240996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Reconfigurable multiband SAW filters for LTE applications 用于LTE应用的可重构多频带SAW滤波器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 1900-01-01 DOI: 10.1109/sirf.2013.6489463
Xiaoming Lu, J. Galipeau, K. Mouthaan, E. Briot, B. Abbott
{"title":"Reconfigurable multiband SAW filters for LTE applications","authors":"Xiaoming Lu, J. Galipeau, K. Mouthaan, E. Briot, B. Abbott","doi":"10.1109/sirf.2013.6489463","DOIUrl":"https://doi.org/10.1109/sirf.2013.6489463","url":null,"abstract":"Reconfigurable surface acoustic wave (SAW) filters are presented for the 700 MHz frequency band currently allocated to Long Term Evolution (LTE). Unlike traditional SAW filters with a fixed center frequency, the proposed filters have a reconfigurable center frequency. First, a novel modular ladder type topology is proposed incorporating SAW resonators and GaAs Single Pole Single Throw (SPST) switches within the basic reconfigurable filter. The measured center frequency in the low band state is 696 MHz and the BW is 3.4%. In the high band state the measured center frequency is 718 MHz and the BW is 2.6%. The center frequency shift is 3.2%. Spurious responses caused by switches are an important design consideration and the root causes of the spurious responses in high band and low band are identified. Then a novel filter topology using Single Pole Double Throw (SPDT) absorptive switches is proposed to remove the spurious responses in the high band state. Finally the root cause of the remaining spurious response is analyzed and a solution is proposed.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121676509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM 通过RTS测量和HRTEM发现氟对MOSFET界面的改善
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 1900-01-01 DOI: 10.1109/sirf.2013.6489433
J. Kim, Jung Joo Kim, C. Lee, Jong Ho Lee, Dong Seok Kim, Nam-Joo Kim, K. Yoo, Heung Sao Park
{"title":"Fluorine improvement of MOSFET interface as revealed by RTS measurements and HRTEM","authors":"J. Kim, Jung Joo Kim, C. Lee, Jong Ho Lee, Dong Seok Kim, Nam-Joo Kim, K. Yoo, Heung Sao Park","doi":"10.1109/sirf.2013.6489433","DOIUrl":"https://doi.org/10.1109/sirf.2013.6489433","url":null,"abstract":"The MOSFET flicker (1/f) noise is reduced by 1 to 2 orders by incorporating fluorine into the oxide-silicon interface. This is attributed to a reduction in interface state density with fluorine as confirmed by charge pumping measurements. Random-Telegraph Signal (RTS) noise measurements on small-size MOSFETs show a considerable increase in the on-off time-constants with fluorine. High-resolution TEM micrographs show the presence of an interface transition layer on samples without fluorine but not with fluorine. It is believed that a transformation of this layer causes a reduction in noise and an increase in oxide thickness.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"716 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122001290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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