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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems最新文献

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Key components of a 130 GHz dicke-radiometer SiGe RFIC 130 GHz天线辐射计SiGe RFIC的关键部件
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489497
E. Shumakher, J. Elkind, D. Elad
{"title":"Key components of a 130 GHz dicke-radiometer SiGe RFIC","authors":"E. Shumakher, J. Elkind, D. Elad","doi":"10.1109/SIRF.2013.6489497","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489497","url":null,"abstract":"This paper presents the design and characterization results of the key components of calibrated passive radiometer (Dicke-radiometer) operating in the low D-band (around 130 GHz) and realized in IBM's standard 0.12-um SiGe BiCMOS technology (IBM8HP, fT /fMAX =180/220 GHz). Several perspective candidates for the Dicke-switch, the low-noise amplifier and the square-law detector have been designed and characterized, obtaining fair agreement between the measured and the simulated performance.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115146338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Overview of two enabling technologies which can change our world: Millimeter/THz silicon RFICs, and RF MEMS (and SOT/SOS) tunable networks 概述可以改变我们世界的两种使能技术:毫米波/太赫兹硅rfic和射频MEMS(和SOT/SOS)可调谐网络
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489412
Gabriel M. Rebeiz
{"title":"Overview of two enabling technologies which can change our world: Millimeter/THz silicon RFICs, and RF MEMS (and SOT/SOS) tunable networks","authors":"Gabriel M. Rebeiz","doi":"10.1109/SIRF.2013.6489412","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489412","url":null,"abstract":"This invited talk will present two different technologies which have the potential to increase the data rate and lower the energy-per-bit in communication systems: Millimeter-wave/THz silicon RFICs and RF MEMS tunable networks. The mm-wave silicon RFIC technology is also applicable to a wide range of miniature sensors, such as low power radars and imaging systems, operating at 100 GHz and above. It is seen that these technologies are enabling a whole new set of systems deemed impossible a few years ago, and are now available at low cost. The application areas of these two technologies will have a far reaching effect on our communication and sensor infrastructure.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124082036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
3 GHz band HTS multichannel receiving unit with 8 modules 3ghz波段HTS多通道接收单元，共8个模块
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486710
H. Kayano, N. Shiokawa, T. Kawaguchi, K. Nakayama, M. Yamazaki
{"title":"3 GHz band HTS multichannel receiving unit with 8 modules","authors":"H. Kayano, N. Shiokawa, T. Kawaguchi, K. Nakayama, M. Yamazaki","doi":"10.1109/RWS.2013.6486710","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486710","url":null,"abstract":"We have proposed an 3 GHz band High-Tc superconducting (HTS) multichannel receiving unit with 8 receiving modules. Each module consists of a small HTS filter and a cooled low noise amplifier (LNA). The HTS filter consists of a number of inter-digital hairpin microstrip line resonators. The module size realize 22×29.5 mm and vacuum chamber size of the HTS multichannel receiving unit realize 152×180×119 mm. It realizes the smallest size as such module products. Insertion loss of the HTS filter was smaller than 0.1dB. As a results, measured results of noise temperature at 77 K for the HTS multichannel receiving unit improved to less than 1/3 as compared with the noise temperature of only LNA at room temperature.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128008121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology 采用130纳米SiGe BiCMOS技术的完全集成的120 ghz六端口接收器前端
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489455
B. Laemmle, K. Schmalz, J. Borngraeber, J. Scheytt, R. Weigel, A. Koelpin, D. Kissinger
{"title":"A fully integrated 120-GHz six-port receiver front-end in a 130-nm SiGe BiCMOS technology","authors":"B. Laemmle, K. Schmalz, J. Borngraeber, J. Scheytt, R. Weigel, A. Koelpin, D. Kissinger","doi":"10.1109/SIRF.2013.6489455","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489455","url":null,"abstract":"A fully integrated six-port receiver front-end at 120 GHz center frequency including a low-noise-amplifier, a passive six-port network, a VCO, and four direct converters is presented in this publication. The overall architecture of the designed six-port receiver is analyzed and fundamental theory of the receiver given. The design of the six-port building blocks is described and measurement results are presented. All circuits have been fabricated in a 0.13μm 300-GHz fT SiGe BiCMOS technology. The fully integrated receiver consumes 85.9 rnA from a 3.3-V supply and occupies an area of 1.03mm2. The receiver includes a VCO with a center frequency of 117.15 GHz, a tuning range of 2.7 GHz, and a phase noise of -86 dBc/Hz at 1 MHz offset. The LNA shows a gain of 12 dB, a 3-dB bandwidth of 30 GHz at a power consumption of 9.2 rnA. The six-port core has a conversion gain of 3.6 dB, a P1dB of -12 dBm, and a power consumption of 28 rnA. The overall receiver shows a conversion gain of 2.4 dB at 120 GHz and P1dB of -17 dBm.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130411159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Industrialization of mmWave SiGe technologies: Status, future requirements and challenges 毫米波SiGe技术产业化:现状、未来需求与挑战
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489447
R. Lachner
{"title":"Industrialization of mmWave SiGe technologies: Status, future requirements and challenges","authors":"R. Lachner","doi":"10.1109/SIRF.2013.6489447","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489447","url":null,"abstract":"An overview of Infineon's Silicon-Germanium millimeter wave technology will be given. The current production process B7HF200 will be briefly described and recent performance enhancements achieved in the European research project DOTFIVE presented. Examples of successful commercial SiGe mmwave products will be given. Driven by the requirements of automotive radar applications in the 76-81 GHz range, directions and challenges of future process developments will be outlined.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132621162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A CMOS based fast high-voltage generation circuit for bicmos embedded RF-MEMS applications 一种用于嵌入式RF-MEMS应用的CMOS快速高压产生电路
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489419
M. Kaynak, M. Purdy, M. Wietstruck, Wogong Zhang, B. Tillack
{"title":"A CMOS based fast high-voltage generation circuit for bicmos embedded RF-MEMS applications","authors":"M. Kaynak, M. Purdy, M. Wietstruck, Wogong Zhang, B. Tillack","doi":"10.1109/SIRF.2013.6489419","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489419","url":null,"abstract":"A CMOS based high voltage generation circuit with very fast rise and fall time performance is presented. The entire sub-block designs, namely ring oscillator, charge pump and the discharge resistor, are given. The rise and the fall time of the generated output voltage are characterized using both electrical and optical techniques. The results show that generation of up to 40V signal with a rise time of less than 10μs is possible. The fall time, which is also very critical specification considering the fast switching applications, strongly depends on the discharge resistor but less than 15μs fall times are achieved using 250KΩ discharge resistor with an expense of higher power consumption.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115739989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Modeling, fabrication and measurement of TSVs for advanced integration of RF/high-speed components 用于射频/高速元件高级集成的tsv建模、制造和测量
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489416
K. Lang, I. Ndip, S. Guttowksi
{"title":"Modeling, fabrication and measurement of TSVs for advanced integration of RF/high-speed components","authors":"K. Lang, I. Ndip, S. Guttowksi","doi":"10.1109/SIRF.2013.6489416","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489416","url":null,"abstract":"Through silicon vias (TSV) are modeled as metal-insulator-semiconductor structures in this paper. The slow-wave, dielectric quasi-TEM and skin-effect modes are discussed. Analytical expressions for calculating the electrical parameters of TSVs, which accurately capture the transition between the modes, are proposed. The TSVs are fabricated and measured. Good correlation is obtained between TSV parameters extracted from measurement and simulation.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115781645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
IF signal filtering techniques in low IF receiver for narrowband communications 窄带通信低中频接收机中频信号滤波技术
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486652
S. Narieda
{"title":"IF signal filtering techniques in low IF receiver for narrowband communications","authors":"S. Narieda","doi":"10.1109/RWS.2013.6486652","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486652","url":null,"abstract":"This paper presents novel filtering techniques for interference cancellation using second order FIR notch filters in low IF receiver for narrowband communications. The presented technique employs several two classes of second order FIR notch filter to cancel the in-band interferences. In the presented filtering technique, IF signals are filtered by these filters, however, in general, the filtering for IF signals causes more power consumption. The interference cancellation filter is composed of not any multipliers but some registers and adders, therefore, it can be considered that the energy consumption for the cancellation can be reduced. Experimental results obtained from computational and actual measurements are shown to valid the effectiveness of the presented filtering technique.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121314066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 60 GHz multi-Gb/s system demonstrator utilizing analog synchronization and 1-bit data conversion 利用模拟同步和1位数据转换的60 GHz多gb /s系统演示器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489445
A. Ulusoy, S. Krone, G. Liu, A. Trasser, F. Guderian, B. Almeroth, A. Barghouthi, M. Hellfeld, S. Schumann, C. Carta, C. Estañ, K. Dombrowski, V. Brankovic, D. Radović, F. Ellinger, G. Fettweis, H. Schumacher
{"title":"A 60 GHz multi-Gb/s system demonstrator utilizing analog synchronization and 1-bit data conversion","authors":"A. Ulusoy, S. Krone, G. Liu, A. Trasser, F. Guderian, B. Almeroth, A. Barghouthi, M. Hellfeld, S. Schumann, C. Carta, C. Estañ, K. Dombrowski, V. Brankovic, D. Radović, F. Ellinger, G. Fettweis, H. Schumacher","doi":"10.1109/SIRF.2013.6489445","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489445","url":null,"abstract":"In this paper, a 60 GHz system demonstrator for multi-Gb/s, short-range, line-of-sight communications is presented. The system utilizes a highly efficient receiver architecture with phase noise suppression capability, which performs carrier synchronization in the analog domain, eliminating the need for high speed, high precision analog-to-digital converters. In the presented demonstrator, with only 1-bit data conversion at the transmitter and receiver, an error-free maximum raw data rate of 3.45 Gb/s is achieved using BPSK modulation over a wireless transmission distance of up to 1m. A more sophisticated modulation capability is demonstrated as well for a raw data rate of 6.9 Gb/s and a bit error rate of 10-5 usina QPSK modulation.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132137039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
An impulse radio UWB transmitter for communication and precise localization 用于通信和精确定位的脉冲无线电超宽带发射机
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489435
D. Martynenko, G. Fischer, O. Klymenko
{"title":"An impulse radio UWB transmitter for communication and precise localization","authors":"D. Martynenko, G. Fischer, O. Klymenko","doi":"10.1109/SIRF.2013.6489435","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489435","url":null,"abstract":"This paper describes a monolithic integrated transmitter intended for impulse radio (IR) Ultra-wide band (UWB) indoor communication and indoor localization. The transmitter operates in the higher UWB band centered at 7.25 GHz and generates impulses with bandwidth of 2.08 GHz. Consequently, the transmitter utilizes for communication and ranging complete UWB band assigned for Europe. The average pulse repetition frequency of 56.64 MHz and a 3-bits pulse position modulation (8-PPM) provides data rates up to 169.92 MBit/sec. Additionally, the driver amplifier with a fast switchable current bias is introduced into the transmitter for power efficient operation. The switch-on time of the bias is equal to 8ns. Besides the communication capability, an advanced time-of-arrival measurement extension is implemented in the transmitter. It runs with the clock of 3.625 GHz and allows the distance measurements with an accuracy of 275 picoseconds (translates to ranging accuracy of approximately 8.3 cm).","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123490244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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