毫米波SiGe技术产业化:现状、未来需求与挑战

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/SIRF.2013.6489447

R. Lachner

{"title":"毫米波SiGe技术产业化:现状、未来需求与挑战","authors":"R. Lachner","doi":"10.1109/SIRF.2013.6489447","DOIUrl":null,"url":null,"abstract":"An overview of Infineon's Silicon-Germanium millimeter wave technology will be given. The current production process B7HF200 will be briefly described and recent performance enhancements achieved in the European research project DOTFIVE presented. Examples of successful commercial SiGe mmwave products will be given. Driven by the requirements of automotive radar applications in the 76-81 GHz range, directions and challenges of future process developments will be outlined.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Industrialization of mmWave SiGe technologies: Status, future requirements and challenges\",\"authors\":\"R. Lachner\",\"doi\":\"10.1109/SIRF.2013.6489447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An overview of Infineon's Silicon-Germanium millimeter wave technology will be given. The current production process B7HF200 will be briefly described and recent performance enhancements achieved in the European research project DOTFIVE presented. Examples of successful commercial SiGe mmwave products will be given. Driven by the requirements of automotive radar applications in the 76-81 GHz range, directions and challenges of future process developments will be outlined.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"88 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2013.6489447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2013.6489447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

我们将概述英飞凌的硅锗毫米波技术。目前的生产工艺B7HF200将简要描述，并介绍欧洲研究项目DOTFIVE最近实现的性能增强。将给出成功的商用SiGe毫米波产品的例子。在76-81 GHz范围内的汽车雷达应用需求的驱动下，将概述未来工艺发展的方向和挑战。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Industrialization of mmWave SiGe technologies: Status, future requirements and challenges

An overview of Infineon's Silicon-Germanium millimeter wave technology will be given. The current production process B7HF200 will be briefly described and recent performance enhancements achieved in the European research project DOTFIVE presented. Examples of successful commercial SiGe mmwave products will be given. Driven by the requirements of automotive radar applications in the 76-81 GHz range, directions and challenges of future process developments will be outlined.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

自引率

0.00%

发文量