A SiGe HBT power amplifier with integrated mode control switches for LTE applications

Abstract

A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is controlled by NMOS switches integrated with the SiGe HBT PA. The PA shows a power added efficiency (PAE) of 28.3% and an adjacent channel leakage ration (ACLR) of -30.5dBc at the output power of 26dBm. At the low Pout of 16dBm, the PA shows a PAE of 15.8% and an ACLR of -29.7dBc. The PA shows substantially improved efficiency at low power mode operation.