带变压器耦合变容器的k波段SiGe双极压控振荡器

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/SIRF.2013.6489448

F. Padovan, M. Tiebout, K. Mertens, A. Bevilacqua, A. Neviani

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引用次数: 8

摘要

提出了一种k波段SiGe双极压控振荡器，其变压器耦合变容工作频率为18.1 ~ 20.5 GHz。该振荡器在19.5 GHz载波的10 MHz偏移时相位噪声低至-135.7 dBc/Hz，同时从3.3 V电源提取7个rnA。该VCO具有-188 dBc/Hz的最先进fof和-191 dBc/Hz的优异fof。该振荡器是为在e波段的较低部分工作的通信系统量身定制的。据其他地方报道，它的后面是一个4倍的频率乘法器。

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A K-band SiGe bipolar VCO with transformer-coupled varactor for backhaul links

A K-band SiGe bipolar VCO with a transformer-coupled varactor operating from 18.1 to 20.5 GHz is presented. The oscillator features a phase noise as low as -135.7 dBc/Hz at 10 MHz offset from the 19.5 GHz carrier while drawing 7 rnA from the 3.3 V supply. The VCO shows a state-of-the-art FOM of -188 dBc/Hz and an excellent FOMT of -191 dBc/Hz. The oscillator is tailored to the communication systems operating in the lower portion of the E-band. It is intended to be followed by a frequency multiplier by four, reported elsewhere.

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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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