LTE应用中集成模式控制开关的SiGe HBT功率放大器

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/RWS.2013.6486700

Jonghun Jung, Geunyong Lee, Jong-In Song

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引用次数: 7

摘要

一种用于835MHz长期演进(LTE)应用的SiGe HBT模式开关功率放大器(PA)采用BiCMOS技术实现。PA具有双2级PA，针对高功率和低功率水平的操作进行了优化。操作模式由集成了SiGe HBT PA的NMOS开关控制。在输出功率为26dBm时，PA的功率附加效率(PAE)为28.3%，相邻通道泄漏比(ACLR)为-30.5dBc。在低输出16dBm时，PA的PAE为15.8%，ACLR为-29.7dBc。该PA在低功耗模式下的工作效率得到了显著提高。

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A SiGe HBT power amplifier with integrated mode control switches for LTE applications

A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is controlled by NMOS switches integrated with the SiGe HBT PA. The PA shows a power added efficiency (PAE) of 28.3% and an adjacent channel leakage ration (ACLR) of -30.5dBc at the output power of 26dBm. At the low Pout of 16dBm, the PA shows a PAE of 15.8% and an ACLR of -29.7dBc. The PA shows substantially improved efficiency at low power mode operation.

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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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