用于0.13-μm SiGe:C BiCMOS工艺的FMCW成像仪的宽带110 GHz四倍频器

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/SIRF.2013.6489415

V. Valenta, A. Ulusoy, A. Trasser, H. Schumacher

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引用次数: 11

摘要

提出了一种采用0.13 μm BiCMOS工艺实现的110 GHz高性能四倍频器。所设计的电路将用于FMCW成像雷达系统，并基于两个Gilbert单元的级联，并将调谐负载连接为正方形。用于验证所实现的四倍器的差分输入信号是使用带有限制差分放大器的有源片上平衡器产生的。电路的测量结果证明，这种毫米波频率产生方法可以提供高达25 GHz的带宽和0 dBm的高输出功率。

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Wideband 110 GHz frequency quadrupler for an FMCW imager in 0.13-μm SiGe:C BiCMOS process

A high-performance 110 GHz frequency quadrupler implemented in 0.13-μm BiCMOS process is presented. The designed circuit is to be employed in an FMCW imaging radar system and is based on a cascade of two Gilbert cells with tuned loads connected as squarers. The differential input signal that is used for validation of the realized quadrupler is generated using an active on-chip balun with a limiting differential amplifier. Measurement results of the circuit prove that this approach to mm-wave frequency generation can provide operation with up to 25 GHz bandwidth along with high output power of 0 dBm.

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2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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