{"title":"带反馈陷波的13/24/35-GHz并发三频带LNA","authors":"Jaeyoung Lee, C. Nguyen","doi":"10.1109/SIRF.2013.6489496","DOIUrl":null,"url":null,"abstract":"A new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz has been designed using a novel tri-band load for stable and high stop-band rejection. The tri-band load is composed of two passive LC notch filters with feedback. The TBLNA fabricated on a 0.18-μm SiGe BiCMOS process achieves power gain of 22.3/24.6/22.2 dB at 13.5/24.5/34.5 GHz, respectively. It has the best noise figure of 3.7/3.3/4.3 dB and the IIP3 of -17.5/-18.5/-15.6 dBm, at each pass-band, respectively. The TBLNA consumes 36 mW from a 1.8 V supply, and occupies 920 μm × 500 μm.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 13/24/35-GHz concurrent tri-band LNA with feedback notches\",\"authors\":\"Jaeyoung Lee, C. Nguyen\",\"doi\":\"10.1109/SIRF.2013.6489496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz has been designed using a novel tri-band load for stable and high stop-band rejection. The tri-band load is composed of two passive LC notch filters with feedback. The TBLNA fabricated on a 0.18-μm SiGe BiCMOS process achieves power gain of 22.3/24.6/22.2 dB at 13.5/24.5/34.5 GHz, respectively. It has the best noise figure of 3.7/3.3/4.3 dB and the IIP3 of -17.5/-18.5/-15.6 dBm, at each pass-band, respectively. The TBLNA consumes 36 mW from a 1.8 V supply, and occupies 920 μm × 500 μm.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2013.6489496\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2013.6489496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 13/24/35-GHz concurrent tri-band LNA with feedback notches
A new concurrent tri-band LNA (TBLNA) operating around 13/24/35 GHz has been designed using a novel tri-band load for stable and high stop-band rejection. The tri-band load is composed of two passive LC notch filters with feedback. The TBLNA fabricated on a 0.18-μm SiGe BiCMOS process achieves power gain of 22.3/24.6/22.2 dB at 13.5/24.5/34.5 GHz, respectively. It has the best noise figure of 3.7/3.3/4.3 dB and the IIP3 of -17.5/-18.5/-15.6 dBm, at each pass-band, respectively. The TBLNA consumes 36 mW from a 1.8 V supply, and occupies 920 μm × 500 μm.