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Fringing gate capacitance model for triple-gate FinFET 三栅极FinFET的边缘栅电容模型
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489442
S. Salas, J. Tinoco, A. G. Martinez-Lopez, J. Alvarado, J. Raskin
{"title":"Fringing gate capacitance model for triple-gate FinFET","authors":"S. Salas, J. Tinoco, A. G. Martinez-Lopez, J. Alvarado, J. Raskin","doi":"10.1109/SIRF.2013.6489442","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489442","url":null,"abstract":"In this paper, a semi-analytical extrinsic gate capacitance model for Triple Gate FinFET, based on three-dimensional numerical simulations, is presented. The model takes into account the source/drain electrode and contact areas. It includes 5 capacitance components that describe the different fringing electrical couplings that exist inside the FinFET structure. The semi-analytical model accurately calculates the total extrinsic gate capacitance as function of the main geometrical parameters of Triple-Gate FinFET.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115548907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C 温度范围为- 55°C至+ 125°C的BiCMOS嵌入式RF-MEMS开关的电-热-机械分析
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489418
M. Wietstruck, M. Kaynak, W. Zhang, B. Tillack
{"title":"Electro-thermo-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from −55°C to + 125°C","authors":"M. Wietstruck, M. Kaynak, W. Zhang, B. Tillack","doi":"10.1109/SIRF.2013.6489418","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489418","url":null,"abstract":"The influence of temperature on electrical, mechanical and RF-performance of a BiCMOS embedded RF-MEMS switch has been demonstrated. Instead of exclusively estimating the temperature-dependent RF-MEMS switch key performance parameters, understanding the temperature influence on the mechanics together with the related electrical and RF-performance is preferred. A detailed thermo-mechanical analysis of the suspended membrane shows that the membrane shape and contact formation is strongly affected by temperature variations. It explains the significant influence of temperature on the pull-in voltage and on-state capacitance showing that a thermo-mechanical analysis is absolutely mandatory for an efficient process and design optimization to increase the temperature robustness.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127406086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Schottky diodes in CMOS for terahertz circuits and systems 用于太赫兹电路和系统的CMOS肖特基二极管
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486635
Yaming Zhang, R. Han, Youngwan Kim, D. Kim, H. Shichijo, S. Sankaran, C. Mao, E. Seok, D. Shim, K. O. Kenneth
{"title":"Schottky diodes in CMOS for terahertz circuits and systems","authors":"Yaming Zhang, R. Han, Youngwan Kim, D. Kim, H. Shichijo, S. Sankaran, C. Mao, E. Seok, D. Shim, K. O. Kenneth","doi":"10.1109/RWS.2013.6486635","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486635","url":null,"abstract":"Using Polysilicon Gate Separated Schottky Diode structures that can be fabricated without any process modifications in a foundry digital 130-nm CMOS process, cut-off frequency of ~2 THz has been measured. In addition, exploiting the complementary of CMOS technology, an anti-parallel diode pair with cut-off frequency of ~660 GHz consisting of an n-type and a p-type Schottky diode has been demonstrated in the same 130-nm CMOS process. Using the diodes, a frequency doubler and a tripler have been demonstrated. Additionally, the diodes have been utilized to implement 280-GHz and 860-GHz detectors for imaging. A fully-integrated 280-GHz 4×4 imager array exhibits measured NEP of 29pW/Hz½ and responsivity of 5.1kV/W (323V/W without the amplifier). The 860-GHz detector without an amplifier achieves responsivity of 355V/W and NEP of 32pW/Hz½. The NEP at 860GHz is 2X better than the best reported performance of MOSFET-based imagers without a silicon lens attached to the chip.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127187479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Integrator and digitizer for a non-coherent IR-UWB receiver 非相干IR-UWB接收机的积分器和数字化仪
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489443
J. Digel, M. Masini, M. Grozing, M. Berroth, G. Fischer, S. Olonbayar, H. Gustat, J. Scheytt
{"title":"Integrator and digitizer for a non-coherent IR-UWB receiver","authors":"J. Digel, M. Masini, M. Grozing, M. Berroth, G. Fischer, S. Olonbayar, H. Gustat, J. Scheytt","doi":"10.1109/SIRF.2013.6489443","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489443","url":null,"abstract":"Impulse-radio ultra-wideband systems (IR-UWB) provide short-range wireless communication and precise localization simultaneously. Especially non-coherent IR-UWB reduces the system complexity which enables the design of low-power receivers. This paper presents an integrating digitizer which integrates rectified baseband pulses of an IR-UWB signal and provides the digitized data to the digital baseband of the receiver. The integrator is composed of two time-interleaved (TI) operational amplifiers with capacitive feedback. With this structure, the integrator can be periodically reset without introducing a dead time between two integration periods. The analog-to-digital conversion is performed by a 6 bit 62.4 MS/s successive approximation register analog-to-digital converter (SAR ADC). The integrating digitizer chip is realized in a 250 nm SiGe:C BiCMOS technology from IHP.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124273795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
49 GHz 6-bit programmable divider in SiGe BiCMOS SiGe BiCMOS中的49 GHz 6位可编程分频器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489451
A. Ergintav, Y. Sun, C. Scheytt, Y. Gurbuz
{"title":"49 GHz 6-bit programmable divider in SiGe BiCMOS","authors":"A. Ergintav, Y. Sun, C. Scheytt, Y. Gurbuz","doi":"10.1109/SIRF.2013.6489451","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489451","url":null,"abstract":"In this paper, a 6-bit true modular programmable frequency divider with division ratios ranging from 64 to 127 is reported. It is composed of a divider chain of 6 divide-by-2/3 cells, and ECL stages that are introduced as synchronization circuits for programming inputs. The synchronization circuits have CMOS input for compatibility with programming circuits. The stand-alone divider chain is functional up to an input clock frequency of 49 GHz. The combination of the divider chain with synchronization circuits is functional up to 44 GHz. The 6 stage divider draws 34 mA current from a 2.7 V supply. The synchronization circuits draw 30 mA from a 3 V supply. The circuit is fabricated in a 0.13 μm SiGe BiCMOS technology, and is well suited for millimeter-wave phase-locked loop (PLL) circuits which require fine frequency resolution.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122109648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Direct downconversion architecture performance in compact pulse-Doppler phased array radar receivers 紧凑型脉冲多普勒相控阵雷达接收机的直接下变频结构性能
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489446
G. Vallant, M. Allén, S. Singh, M. Epp, S. Chartier, M. Valkama
{"title":"Direct downconversion architecture performance in compact pulse-Doppler phased array radar receivers","authors":"G. Vallant, M. Allén, S. Singh, M. Epp, S. Chartier, M. Valkama","doi":"10.1109/SIRF.2013.6489446","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489446","url":null,"abstract":"Following the design trend of integrated receivers, the direct downconversion (DD) principle is investigated from radar system-level perspective, but with a strong focus on the analog mechanisms. While most modern radar receivers favor a digital downconversion to avoid I/Q mismatches, they demand discrete realization and larger form factors. Recent advances in digital correction algorithms originating from wireless communications, and the ongoing technology scaling of digital circuitry, allows the DD receiver to be pushed into a higher performance class. With analog and digital parts closely interacting, a receiver on chip can provide spurious-free dynamic range beyond 60 dB, suitable for deployment in phased arrays. By evaluating measurement data from self-designed single receivers and applying adequate digital correction methodology, we give essential metrics and performance results to show the feasibility of DD for phased-array radar applications.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130531466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 4GHz-bandwidth op-amp-free track-and-hold and 6-bit flash ADC in 45nm SOI CMOS 4ghz带宽无运放跟踪保持和6位闪存ADC在45nm SOI CMOS
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489454
M. Chen, D. Tian, S. Phatak, L. Carley, D. Ricketts
{"title":"A 4GHz-bandwidth op-amp-free track-and-hold and 6-bit flash ADC in 45nm SOI CMOS","authors":"M. Chen, D. Tian, S. Phatak, L. Carley, D. Ricketts","doi":"10.1109/SIRF.2013.6489454","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489454","url":null,"abstract":"A 2GS/s 6-bit flash sub-ADC with an op-amp free track-and-hold (T&H) for use in an 8GS/s 4-way time-interleaved ADC was implemented in 45nm SOI CMOS. The T&H utilizes a passive charge sharing technique and achieves a 4GHz input bandwidth at 2GS/s clock rate without an op-amp. The flash sub-ADC consumes 74mW at 2GS/s and occupies an area of 0.2mm2. The measured INL and DNL are -0.9/1.0LSB and -1.35/0.9LSB, respectively. The sub-ADC SNDR is 33.9dB at 2GS/s with a 125MHz input and 30.6dB with a 4GHz input.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130123376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A hybrid GaN/organic X-band transmitter module 一种混合GaN/有机x波段发射模块
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486701
S. Pavlidis, C. D. Morcillo, P. Song, W. Khan, R. Fitch, J. Gillespie, Rey Febo, T. Quach, J. Papapolymerou
{"title":"A hybrid GaN/organic X-band transmitter module","authors":"S. Pavlidis, C. D. Morcillo, P. Song, W. Khan, R. Fitch, J. Gillespie, Rey Febo, T. Quach, J. Papapolymerou","doi":"10.1109/RWS.2013.6486701","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486701","url":null,"abstract":"The design and implementation of a compact, flexible and lightweight X-band transmitter (Tx) module based on high-power gallium nitride (GaN) transistor technology and a low-cost organic package made from liquid crystal polymer (LCP) is presented. In-package measurements of the power amplifier (PA) at 8 GHz show a P.A.E.max of >31%, P1dB of 20 dBm and gain of 11.42 dB. A 4×1 patch antenna array was also fabricated on the same platform. Though no thermal management was used, an effective isotropically radiated power (EIRP) in excess of 20 dBm at 10 GHz was measured for the transmitter module, consisting of only a single-stage PA and antenna array, thus demonstrating that even greater performance can be achieved in the future.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114199681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A wireless sensing platform utilizing ambient RF energy 利用环境射频能量的无线传感平台
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/RWS.2013.6486731
Aaron N. Parks, A. Sample, Yi Zhao, Joshua R. Smith
{"title":"A wireless sensing platform utilizing ambient RF energy","authors":"Aaron N. Parks, A. Sample, Yi Zhao, Joshua R. Smith","doi":"10.1109/RWS.2013.6486731","DOIUrl":"https://doi.org/10.1109/RWS.2013.6486731","url":null,"abstract":"An ambient RF energy harvesting sensor node with onboard sensing and communication functionality was developed and tested. The minimal RF input power required for sensor node operation was -18 dBm (15.8 μW). Using a 6 dBi receive antenna, the most sensitive RF harvester was shown to operate at a distance of 10.4 km from a 1 MW UHF television broadcast transmitter, and over 200 m from a cellular base transceiver station. A complete ambient RF-powered prototype was constructed which measured temperature and light level and wirelessly transmitted these measurements.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"2012 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128073796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 187
A 76 GHz oscillator by high-Q differential transmission line loaded with split ring resonator in 65-nm CMOS 采用高q差分传输线负载65纳米CMOS分环谐振器制备76 GHz振荡器
2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI: 10.1109/SIRF.2013.6489449
Deyun Cai, Y. Shang, Hao Yu, Junyan Ren, K. Yeo
{"title":"A 76 GHz oscillator by high-Q differential transmission line loaded with split ring resonator in 65-nm CMOS","authors":"Deyun Cai, Y. Shang, Hao Yu, Junyan Ren, K. Yeo","doi":"10.1109/SIRF.2013.6489449","DOIUrl":"https://doi.org/10.1109/SIRF.2013.6489449","url":null,"abstract":"A power and area efficient CMOS oscillator by high-Q metamaterial resonator is introduced in this paper for phase noise improvement. The resonator is based on the differential transmission-line (T-line) loaded with split ring resonator (SRR), which can enhance the EM energy coupling and further improve the Q. The proposed oscillator is implemented in 65-nm CMOS process, which consumes 2.7 mA and occupies a compact core area of 480 μm × 320 μm. At the oscillation frequency (76 GHz), the measured phase noise is -108.8 dBc/Hz at 10 MHz offset and the figure-of-merit (FOM) is -182.1 dBc/Hz, which is 4 dB better than that of the standing-wave oscillator implemented on the same chip.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115674610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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