A 4GHz-bandwidth op-amp-free track-and-hold and 6-bit flash ADC in 45nm SOI CMOS

M. Chen, D. Tian, S. Phatak, L. Carley, D. Ricketts
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引用次数: 4

Abstract

A 2GS/s 6-bit flash sub-ADC with an op-amp free track-and-hold (T&H) for use in an 8GS/s 4-way time-interleaved ADC was implemented in 45nm SOI CMOS. The T&H utilizes a passive charge sharing technique and achieves a 4GHz input bandwidth at 2GS/s clock rate without an op-amp. The flash sub-ADC consumes 74mW at 2GS/s and occupies an area of 0.2mm2. The measured INL and DNL are -0.9/1.0LSB and -1.35/0.9LSB, respectively. The sub-ADC SNDR is 33.9dB at 2GS/s with a 125MHz input and 30.6dB with a 4GHz input.
4ghz带宽无运放跟踪保持和6位闪存ADC在45nm SOI CMOS
在45nm SOI CMOS中实现了用于8GS/s 4路时间交错ADC的2GS/s 6位闪存子ADC,其无运放跟踪保持(T&H)。T&H采用无源电荷共享技术,在没有运放的情况下以2GS/s时钟速率实现4GHz输入带宽。flash子adc以2GS/s的速度消耗74mW,占地面积为0.2mm2。测得INL和DNL分别为-0.9/1.0LSB和-1.35/0.9LSB。子adc的SNDR在2GS/s时为33.9dB,输入125MHz时为30.6dB,输入4GHz时为30.6dB。
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