A 76 GHz oscillator by high-Q differential transmission line loaded with split ring resonator in 65-nm CMOS

Deyun Cai, Y. Shang, Hao Yu, Junyan Ren, K. Yeo
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引用次数: 2

Abstract

A power and area efficient CMOS oscillator by high-Q metamaterial resonator is introduced in this paper for phase noise improvement. The resonator is based on the differential transmission-line (T-line) loaded with split ring resonator (SRR), which can enhance the EM energy coupling and further improve the Q. The proposed oscillator is implemented in 65-nm CMOS process, which consumes 2.7 mA and occupies a compact core area of 480 μm × 320 μm. At the oscillation frequency (76 GHz), the measured phase noise is -108.8 dBc/Hz at 10 MHz offset and the figure-of-merit (FOM) is -182.1 dBc/Hz, which is 4 dB better than that of the standing-wave oscillator implemented on the same chip.
采用高q差分传输线负载65纳米CMOS分环谐振器制备76 GHz振荡器
本文介绍了一种利用高q超材料谐振腔来改善相位噪声的功率高效、面积高效的CMOS振荡器。该谐振器基于差分传动线(t线)负载的分环谐振器(SRR),可以增强EM能量耦合并进一步提高q值。该振荡器采用65 nm CMOS工艺实现,功耗为2.7 mA,核心面积为480 μm × 320 μm。在振荡频率(76 GHz)下,在10 MHz偏置时测得的相位噪声为-108.8 dBc/Hz,性能因数(FOM)为-182.1 dBc/Hz,比在同一芯片上实现的驻波振荡器提高了4 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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