A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck
{"title":"采用90纳米CMOS的多千兆60 GHz OOK前端","authors":"A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck","doi":"10.1109/SIRF.2013.6489444","DOIUrl":null,"url":null,"abstract":"In this work an on-off shift keying transmitter front-end for 60 GHz wireless communication is presented. To enhance the transmitter performance, a novel modulator topology is implemented. Designed and fabricated in 90 nm CMOS, the transmitter occupies 0.38 mm2 and provides 8 dBm output power with 36 mW DC power consumption. The transmitter measurement in a complete 60 GHz wireless set-up showed more than 6 Gbit/s data rate over 4 m distance.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Multi-gigabit 60 GHz OOK front-end in 90 nm CMOS\",\"authors\":\"A. Hamidian, A. Malignaggi, R. Shu, A. Kamal, G. Boeck\",\"doi\":\"10.1109/SIRF.2013.6489444\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work an on-off shift keying transmitter front-end for 60 GHz wireless communication is presented. To enhance the transmitter performance, a novel modulator topology is implemented. Designed and fabricated in 90 nm CMOS, the transmitter occupies 0.38 mm2 and provides 8 dBm output power with 36 mW DC power consumption. The transmitter measurement in a complete 60 GHz wireless set-up showed more than 6 Gbit/s data rate over 4 m distance.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2013.6489444\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2013.6489444","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work an on-off shift keying transmitter front-end for 60 GHz wireless communication is presented. To enhance the transmitter performance, a novel modulator topology is implemented. Designed and fabricated in 90 nm CMOS, the transmitter occupies 0.38 mm2 and provides 8 dBm output power with 36 mW DC power consumption. The transmitter measurement in a complete 60 GHz wireless set-up showed more than 6 Gbit/s data rate over 4 m distance.