A 36–49 GHz injection-locked frequency divider with transformer-based dual-path injection

Abstract

In this work, a Q-band injection-locked frequency divider (ILFD) has been implemented in 90 nm CMOS technology. An ILFD topology of transformer-based dual-path injection was proposed to maximize the power gain of the injection path and improve the locking range of the ILFD. On-wafer measurements showed that with 0 dBm input power, the proposed ILFD achieves a 30.5 % locking range from 36 GHz to 49 GHz and consumes only 2.64 mW with a 1.2 V power supply.