基于变压器的双路注入的36-49 GHz注入锁定分频器

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/SIRF.2013.6489450

R. Shu, V. Subramanian, A. Hamidian, A. Malignaggi, M. K. Ali, G. Boeck

{"title":"基于变压器的双路注入的36-49 GHz注入锁定分频器","authors":"R. Shu, V. Subramanian, A. Hamidian, A. Malignaggi, M. K. Ali, G. Boeck","doi":"10.1109/SIRF.2013.6489450","DOIUrl":null,"url":null,"abstract":"In this work, a Q-band injection-locked frequency divider (ILFD) has been implemented in 90 nm CMOS technology. An ILFD topology of transformer-based dual-path injection was proposed to maximize the power gain of the injection path and improve the locking range of the ILFD. On-wafer measurements showed that with 0 dBm input power, the proposed ILFD achieves a 30.5 % locking range from 36 GHz to 49 GHz and consumes only 2.64 mW with a 1.2 V power supply.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 36–49 GHz injection-locked frequency divider with transformer-based dual-path injection\",\"authors\":\"R. Shu, V. Subramanian, A. Hamidian, A. Malignaggi, M. K. Ali, G. Boeck\",\"doi\":\"10.1109/SIRF.2013.6489450\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a Q-band injection-locked frequency divider (ILFD) has been implemented in 90 nm CMOS technology. An ILFD topology of transformer-based dual-path injection was proposed to maximize the power gain of the injection path and improve the locking range of the ILFD. On-wafer measurements showed that with 0 dBm input power, the proposed ILFD achieves a 30.5 % locking range from 36 GHz to 49 GHz and consumes only 2.64 mW with a 1.2 V power supply.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2013.6489450\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2013.6489450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

在这项工作中，一个q波段注入锁定分频器(ILFD)已经在90纳米CMOS技术中实现。为了最大化注入路径的功率增益，提高ILFD的锁定范围，提出了一种基于变压器的双路注入ILFD拓扑。片上测量表明，在输入功率为0 dBm的情况下，所提出的ILFD在36 GHz至49 GHz范围内实现了30.5%的锁定范围，并且在1.2 V电源下功耗仅为2.64 mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 36–49 GHz injection-locked frequency divider with transformer-based dual-path injection

In this work, a Q-band injection-locked frequency divider (ILFD) has been implemented in 90 nm CMOS technology. An ILFD topology of transformer-based dual-path injection was proposed to maximize the power gain of the injection path and improve the locking range of the ILFD. On-wafer measurements showed that with 0 dBm input power, the proposed ILFD achieves a 30.5 % locking range from 36 GHz to 49 GHz and consumes only 2.64 mW with a 1.2 V power supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

自引率

0.00%

发文量