一种用于恒包络调制系统的CMOS e类功率放大器，在5 GHz频率下具有40%的PAE

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2013-03-28 DOI:10.1109/SIRF.2013.6489434

Y. Yamashita, D. Kanemoto, H. Kanaya, R. Pokharel, K. Yoshida

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引用次数: 19

摘要

本文介绍了一种基于0.18 μm CMOS技术的高效e类功率放大器(PA)的设计。所提出的e类PA采用注入锁定技术来降低所需的输入功率。此外，为了减少器件应力和寄生电容，所提出的PA采用级联结构拓扑。该放大器在5.0 GHz下提供15.4 dbm的饱和输出功率，最大功率附加效率(PAE)为40.6%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A CMOS class-E power amplifier of 40-% PAE at 5 GHz for constant envelope modulation system

This paper describes the design of a high-efficient class-E power amplifier (PA) for 5-GHz wireless transmitter applications using constant envelope modulation scheme in a 0.18-μm CMOS technology. The proposed class-E PA employs injection-locking technique to reduce required input power. Furthermore, cascode topology is utilized for the proposed PA in order to reduce device stress and parasitic capacitances. The proposed PA delivers 15.4-dBm saturated output power at 5.0 GHz with 40.6-% maximum power-added efficiency (PAE) for measurement.

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来源期刊

2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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