{"title":"一种10 - 67 ghz CMOS阶跃衰减器,具有改进的平坦度和大衰减范围","authors":"J. Bae, Jaeyoung Lee, C. Nguyen","doi":"10.1109/SIRF.2013.6489438","DOIUrl":null,"url":null,"abstract":"A four-bit CMOS step attenuator is designed using a new design method to achieve improved flatness and large attenuation range from 10-67 GHz. The design method is based on the frequency-response characteristics of the conventional Pi-, T-, and distributed attenuators. Over 10-67 GHz, the measured results exhibit attenuation flatness of 6.8 dB and attenuation range of 32-42 dB.","PeriodicalId":286070,"journal":{"name":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"31 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 10–67-GHz CMOS step attenuator with improved flatness and large attenuation range\",\"authors\":\"J. Bae, Jaeyoung Lee, C. Nguyen\",\"doi\":\"10.1109/SIRF.2013.6489438\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A four-bit CMOS step attenuator is designed using a new design method to achieve improved flatness and large attenuation range from 10-67 GHz. The design method is based on the frequency-response characteristics of the conventional Pi-, T-, and distributed attenuators. Over 10-67 GHz, the measured results exhibit attenuation flatness of 6.8 dB and attenuation range of 32-42 dB.\",\"PeriodicalId\":286070,\"journal\":{\"name\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"31 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2013.6489438\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 13th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2013.6489438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 10–67-GHz CMOS step attenuator with improved flatness and large attenuation range
A four-bit CMOS step attenuator is designed using a new design method to achieve improved flatness and large attenuation range from 10-67 GHz. The design method is based on the frequency-response characteristics of the conventional Pi-, T-, and distributed attenuators. Over 10-67 GHz, the measured results exhibit attenuation flatness of 6.8 dB and attenuation range of 32-42 dB.