52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)最新文献_第3页

Heat transfer and thermal stress analysis in the new generation quasi-monolithic integration technology (QMIT) 新一代准单片集成技术(QMIT)中的传热与热应力分析

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008155

M. Joodaki, T. Senyildiz, G. Kompa

引用次数: 4

Prediction of solder interconnects wetting and experimental evaluation 焊料互连润湿预测及实验评价

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008328

S. Kang, D. Baldwin

引用次数: 0

Alternative Z-axis connector technologies for high-density 3-D packaging 用于高密度3d封装的替代z轴连接器技术

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008240

S. Spiesshoefer, L. Schaper, K. Maner, E. Porter, F. Barlow, M. Glover, W. Marsh, G. Bates, M. Lucas

引用次数: 3

Effect of adhesive layer properties on interfacial fracture in thin-film high-density interconnects 粘接层性能对薄膜高密度互连界面断裂的影响

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008199

M. Modi, S. Sitaraman

{"title":"Effect of adhesive layer properties on interfacial fracture in thin-film high-density interconnects","authors":"M. Modi, S. Sitaraman","doi":"10.1109/ECTC.2002.1008199","DOIUrl":"https://doi.org/10.1109/ECTC.2002.1008199","url":null,"abstract":"Delamination of intrinsically stressed films is commonly encountered in microelectronic systems. Thin films deposited through physical vapor deposition processes typically accrue intrinsic stresses through the micro structural variations caused by deposition or through thermally induced stresses imposed during cool-down from deposition temperatures. These intrinsic stresses can have a peak magnitude upwards of I GPa. To help prevent delamination, Ti or Cr \"adhesive\" layers, with microscale or nanoscale thickness, are used to increase the adhesion between the thin film and substrate. This study applies the Finite Element Method (FEM) to study the resistance to delamination of an innovative, stress-engineered, thin film interconnect. Adhesive layer parameters such as thickness, deposition-induced intrinsic stress, and material properties are examined. Fracture criteria (energy release rate and mode mixity) are used to quantify the effect of varying adhesive layer properties on interfacial fracture. The finite element study results are compared to a previously developed plate theory model, which does not account for the large deflection present in highly stressed film delamination. To determine whether a delamination will propagate, it is imperative that the interfacial fracture toughness be experimentally measured for the interface under study. Experimental measurement of interfacial fracture toughness and the associated mode mixity is currently a challenge for thin film interfaces. In addition to the numerical simulation, this paper discusses modifications to the decohesion test that yields a method that can tightly bound the interfacial fracture toughness using a single test wafer. Further it is a method that uses common IC fabrication techniques, can achieve low mode mixities easily and efficiently, and can be used with titanium interfaces. Results for Ti/Alumina interfacial fracture toughness are discussed and applied to the numerical study.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125639519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

Experimental investigation on the progressive failure mechanism of solder balls during ball shear test 球剪试验中焊锡球渐进破坏机理的实验研究

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008218

Xingjia Huang, S. Lee, C. Yan

引用次数: 14

Gold-tin solder electroplating of photo-resist laminated AlN ceramics 光阻层压AlN陶瓷的金锡焊料电镀

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008085

S. Akhlaghi, J. Broughton, D. Ivey

引用次数: 0

New qualification approaches for opto-electronic devices 光电器件鉴定新方法

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008149

P. Berthier, D. Laffitte, J. Périnet, J. Goudard, X. Boddaert, P. Chazan

引用次数: 2

Understanding modulus trends in ultra low K dielectric materials through the use of molecular modeling 通过使用分子模型了解超低K介电材料的模量趋势

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008276

N. Iwamoto, L. Moro, B. Bedwell, P. Apen

{"title":"Understanding modulus trends in ultra low K dielectric materials through the use of molecular modeling","authors":"N. Iwamoto, L. Moro, B. Bedwell, P. Apen","doi":"10.1109/ECTC.2002.1008276","DOIUrl":"https://doi.org/10.1109/ECTC.2002.1008276","url":null,"abstract":"Molecular modeling has previously been used to study adhesion and surface energy effects of die attach, underfill and viafill formulations, and is currently being used to study the mechanical property trends of the new class of ultra low k nanoporous dielectric materials, NANOGLASS/spl reg/ porous spin-on-glass (SOG) and GX3-P/sup TM/ porous organic, being developed within Honeywell. The need to understand material performance from a molecular level is especially understandable when considering the target application in IC fabrication. With such small microstructures, the impact of the molecular mechanical properties imparted by the molecular structure and architecture become more and more important. In addition, we are finding that by understanding the effects of the formulation on the mechanical properties from the molecular level, formulation changes can be planned directly targeted at specific properties. Although we are using many aspects of molecular modeling to help us understand SOG and organic dielectric properties such as density, wetting, solubility and adhesion, for this paper we have concentrated on reporting our observations on modulus. Our studies have found that we can correlate the experimental modulus of these materials very simply with a molecularly derived modulus.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134058778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19

Package characterization and development of a flip chip QFN package: fcMLF 倒装QFN封装的封装特性和开发:fcMLF

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008122

D. Mccann, Su-Min Ha

引用次数: 16

Hybrid integration of photonic subsystems 光子子系统的混合集成

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI: 10.1109/ECTC.2002.1008153

P.S. Whitney

引用次数: 2