新一代准单片集成技术(QMIT)中的传热与热应力分析

M. Joodaki, T. Senyildiz, G. Kompa
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引用次数: 4

摘要

利用三维有限元模拟器对新一代准单片集成技术(QMIT)进行了静态传热和热应力分析。为了验证仿真结果,使用了白光干涉测量以及珀尔帖元件和铂温度传感器。结果表明,在有源器件背面电镀200 /spl μ m的镀金散热器和填充金刚石的聚酰亚胺分别可以达到11/spl°/C/W和8.5/spl°/C/W的热阻。这为利用新型QMIT成功实现含功率有源器件的高频电路提供了可能。模拟和测量结果表明,与早期的概念相比,新一代QMIT的热应力大大降低,极大地提高了封装的使用寿命。计算结果与实测结果非常吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Heat transfer and thermal stress analysis in the new generation quasi-monolithic integration technology (QMIT)
Static heat transfer and thermal stress analysis for the new generation quasi-monolithic integration technology (QMIT) have been performed using a three-dimensional finite element simulator. To confirm the simulation results, white-light interferometry measurement along with a Peltier element and a Pt-temperature sensor have been used. It has been shown that thermal resistances of 11/spl deg/C/W and 8.5/spl deg/C/W are possible using 200 /spl mu/m electroplated gold heat-spreader and diamond-filled polyimide on the backside of the active device, respectively. This promises successful realization of the high frequency circuits containing power active devices using the novel QMIT. Simulation and measurement results demonstrate a great decrease of thermal stress in the new generation QMIT in comparison to the earlier concept which extremely improves life-time of the packaging. A remarkable agreement between calculated and measured results was found.
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