粘接层性能对薄膜高密度互连界面断裂的影响

M. Modi, S. Sitaraman
{"title":"粘接层性能对薄膜高密度互连界面断裂的影响","authors":"M. Modi, S. Sitaraman","doi":"10.1109/ECTC.2002.1008199","DOIUrl":null,"url":null,"abstract":"Delamination of intrinsically stressed films is commonly encountered in microelectronic systems. Thin films deposited through physical vapor deposition processes typically accrue intrinsic stresses through the micro structural variations caused by deposition or through thermally induced stresses imposed during cool-down from deposition temperatures. These intrinsic stresses can have a peak magnitude upwards of I GPa. To help prevent delamination, Ti or Cr \"adhesive\" layers, with microscale or nanoscale thickness, are used to increase the adhesion between the thin film and substrate. This study applies the Finite Element Method (FEM) to study the resistance to delamination of an innovative, stress-engineered, thin film interconnect. Adhesive layer parameters such as thickness, deposition-induced intrinsic stress, and material properties are examined. Fracture criteria (energy release rate and mode mixity) are used to quantify the effect of varying adhesive layer properties on interfacial fracture. The finite element study results are compared to a previously developed plate theory model, which does not account for the large deflection present in highly stressed film delamination. To determine whether a delamination will propagate, it is imperative that the interfacial fracture toughness be experimentally measured for the interface under study. Experimental measurement of interfacial fracture toughness and the associated mode mixity is currently a challenge for thin film interfaces. In addition to the numerical simulation, this paper discusses modifications to the decohesion test that yields a method that can tightly bound the interfacial fracture toughness using a single test wafer. Further it is a method that uses common IC fabrication techniques, can achieve low mode mixities easily and efficiently, and can be used with titanium interfaces. Results for Ti/Alumina interfacial fracture toughness are discussed and applied to the numerical study.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Effect of adhesive layer properties on interfacial fracture in thin-film high-density interconnects\",\"authors\":\"M. Modi, S. Sitaraman\",\"doi\":\"10.1109/ECTC.2002.1008199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Delamination of intrinsically stressed films is commonly encountered in microelectronic systems. Thin films deposited through physical vapor deposition processes typically accrue intrinsic stresses through the micro structural variations caused by deposition or through thermally induced stresses imposed during cool-down from deposition temperatures. These intrinsic stresses can have a peak magnitude upwards of I GPa. To help prevent delamination, Ti or Cr \\\"adhesive\\\" layers, with microscale or nanoscale thickness, are used to increase the adhesion between the thin film and substrate. This study applies the Finite Element Method (FEM) to study the resistance to delamination of an innovative, stress-engineered, thin film interconnect. Adhesive layer parameters such as thickness, deposition-induced intrinsic stress, and material properties are examined. Fracture criteria (energy release rate and mode mixity) are used to quantify the effect of varying adhesive layer properties on interfacial fracture. The finite element study results are compared to a previously developed plate theory model, which does not account for the large deflection present in highly stressed film delamination. To determine whether a delamination will propagate, it is imperative that the interfacial fracture toughness be experimentally measured for the interface under study. Experimental measurement of interfacial fracture toughness and the associated mode mixity is currently a challenge for thin film interfaces. In addition to the numerical simulation, this paper discusses modifications to the decohesion test that yields a method that can tightly bound the interfacial fracture toughness using a single test wafer. Further it is a method that uses common IC fabrication techniques, can achieve low mode mixities easily and efficiently, and can be used with titanium interfaces. Results for Ti/Alumina interfacial fracture toughness are discussed and applied to the numerical study.\",\"PeriodicalId\":285713,\"journal\":{\"name\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC.2002.1008199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2002.1008199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

在微电子系统中,经常会遇到本征应力薄膜的分层。通过物理气相沉积工艺沉积的薄膜通常通过沉积引起的微观结构变化或在沉积温度冷却期间施加的热诱导应力而产生本征应力。这些内在应力的峰值可以超过1gpa。为了防止分层,使用微米级或纳米级厚度的Ti或Cr“粘合剂”层来增加薄膜和衬底之间的附着力。本研究应用有限元法(FEM)来研究一种创新的应力工程薄膜互连的抗分层性。胶粘剂层参数,如厚度,沉积诱发的本征应力和材料性能进行了检查。断裂准则(能量释放率和模态混合)用于量化不同粘结层性能对界面断裂的影响。有限元研究结果与先前开发的板理论模型进行了比较,该模型没有考虑到在高应力薄膜分层中存在的大挠度。为了确定分层是否会扩展,必须对所研究的界面进行断裂韧性的实验测量。界面断裂韧性和相关模态混合的实验测量是目前薄膜界面研究的一个挑战。除了数值模拟外,本文还讨论了对脱黏试验的改进,从而产生了一种可以使用单个测试晶片紧密结合界面断裂韧性的方法。此外,它是一种使用普通IC制造技术的方法,可以轻松有效地实现低模式混合,并且可以与钛接口一起使用。讨论了Ti/氧化铝界面断裂韧性的研究结果,并将其应用于数值研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of adhesive layer properties on interfacial fracture in thin-film high-density interconnects
Delamination of intrinsically stressed films is commonly encountered in microelectronic systems. Thin films deposited through physical vapor deposition processes typically accrue intrinsic stresses through the micro structural variations caused by deposition or through thermally induced stresses imposed during cool-down from deposition temperatures. These intrinsic stresses can have a peak magnitude upwards of I GPa. To help prevent delamination, Ti or Cr "adhesive" layers, with microscale or nanoscale thickness, are used to increase the adhesion between the thin film and substrate. This study applies the Finite Element Method (FEM) to study the resistance to delamination of an innovative, stress-engineered, thin film interconnect. Adhesive layer parameters such as thickness, deposition-induced intrinsic stress, and material properties are examined. Fracture criteria (energy release rate and mode mixity) are used to quantify the effect of varying adhesive layer properties on interfacial fracture. The finite element study results are compared to a previously developed plate theory model, which does not account for the large deflection present in highly stressed film delamination. To determine whether a delamination will propagate, it is imperative that the interfacial fracture toughness be experimentally measured for the interface under study. Experimental measurement of interfacial fracture toughness and the associated mode mixity is currently a challenge for thin film interfaces. In addition to the numerical simulation, this paper discusses modifications to the decohesion test that yields a method that can tightly bound the interfacial fracture toughness using a single test wafer. Further it is a method that uses common IC fabrication techniques, can achieve low mode mixities easily and efficiently, and can be used with titanium interfaces. Results for Ti/Alumina interfacial fracture toughness are discussed and applied to the numerical study.
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