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2022 IEEE Latin American Electron Devices Conference (LAEDC)最新文献

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Optical Fiber Angle Sensors for the PrHand Prosthesis: Development and Application in Grasp Types Recognition with Machine Learning PrHand义肢用光纤角度传感器:在机器学习抓取类型识别中的发展与应用
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908232
Laura De Arco, M. Pontes, M. Segatto, M. Monteiro, C. Cifuentes, C. Díaz
{"title":"Optical Fiber Angle Sensors for the PrHand Prosthesis: Development and Application in Grasp Types Recognition with Machine Learning","authors":"Laura De Arco, M. Pontes, M. Segatto, M. Monteiro, C. Cifuentes, C. Díaz","doi":"10.1109/LAEDC54796.2022.9908232","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908232","url":null,"abstract":"This work presents the instrumentation of the PrHand upper-limb prosthesis with optical fiber sensors to measure the angle of the proximal interphalangeal joint. The angle sensors are based on bending-induced loss and are fabricated with polymer optical fiber (POF). The finger angle information is used in a k-Nearest Neighbor (k-NN) machine learning algorithm for grasp recognition. Four kinds of grasp are evaluated: hook grip, spherical grip, tripod pinch, and cylindrical grip, with three objects each. As mentioned in the algorithm validation, it is essential to note: The average accuracy was 92.81 %.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126175632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
ALD for Advanced Logic, Memory, Sensing and Quantum Technologies 先进的逻辑，记忆，传感和量子技术的ALD
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908229
J. Molina-Reyes
{"title":"ALD for Advanced Logic, Memory, Sensing and Quantum Technologies","authors":"J. Molina-Reyes","doi":"10.1109/LAEDC54796.2022.9908229","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908229","url":null,"abstract":"This work resumes some of the most important results that have been obtained in our research group regarding the use of atomic-layer deposition (ALD) as the main thin-film deposition technique for metal oxides with high dielectric constant. ALD has been applied for the development of logic, memory, sensing and quantum technologies in which ultra-thin metal oxides (Al2O3, HfO2 and TiO2 with a physical thickness of less than 10nm), are the active part of the final devices under study.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122752061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low Voltage and Low Power AC Coupled Instrumentation Amplifier 低电压低功率交流耦合仪表放大器
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908219
Ricardo Bolaños-Pérez, A. Díaz-Sánchez, J. M. Rocha-Pérez, J. Ramírez-Angulo, A. Bautista-Castillo, Pedro Morales-Lopez
{"title":"Low Voltage and Low Power AC Coupled Instrumentation Amplifier","authors":"Ricardo Bolaños-Pérez, A. Díaz-Sánchez, J. M. Rocha-Pérez, J. Ramírez-Angulo, A. Bautista-Castillo, Pedro Morales-Lopez","doi":"10.1109/LAEDC54796.2022.9908219","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908219","url":null,"abstract":"Biological signals from the human body range from a few hundred microvolts (μV) to a few millivolts (mV), making accurate reading difficult, especially when they are measured in a noisy environment. In this work, the design of a low voltage and low power OPAMP and Instrumentation Amplifier (AI) for biomedical applications are presented. As an example, a signal from an electrocardiogram is amplified, verifying the good performance of the designed circuit. Important features of the designed AI are: reduced power rails (±0.4V), low power consumption (309nW), and high immunity to common-mode noise (CMRR=82dB), in a silicon area of 320μm X 200μm. The proposed AI is suitable for applications in wearable and implantable systems. The IA was manufactured in a 0.18μm TSMC technology.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122428263","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dedicated ICs for the Characterization of Variability and Aging Studies and their Use in Lightweight Security Applications : Invited paper 用于表征变异性和老化研究的专用集成电路及其在轻量级安全应用中的应用:特邀论文
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908187
J. Diaz-Fortuny, P. Saraza-Canflanca, M. Vandemaele, E. Bury, R. Degraeve, B. Kaczer
{"title":"Dedicated ICs for the Characterization of Variability and Aging Studies and their Use in Lightweight Security Applications : Invited paper","authors":"J. Diaz-Fortuny, P. Saraza-Canflanca, M. Vandemaele, E. Bury, R. Degraeve, B. Kaczer","doi":"10.1109/LAEDC54796.2022.9908187","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908187","url":null,"abstract":"With today’s rapid development of novel and advanced technology nodes, transistor degradation phenomena like BTI and HCI are evolving to an even more serious concern for analog and digital circuit designers. Besides, time-dependent variability effects like TDDB and transient effects like RTN, which can cause significant performance deviations or even a total circuit failure, can alternatively be used for security applications such as physical unclonable functions. In this context, it is fundamental to accurately model variability and degradation which requires elaborate statistical characterization of these phenomena. To avoid the long testing times that such characterization would otherwise imply, the test circuits should allow the parallelization of stress application. This paper presents a test framework based on the utilization of transistor and circuit arrays that allows the time-efficient testing of degradation phenomena.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128870958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible Sensing Surfaces Based on Organic Electronics 基于有机电子学的柔性传感表面
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908203
M. Fattori, E. Cantatore
{"title":"Flexible Sensing Surfaces Based on Organic Electronics","authors":"M. Fattori, E. Cantatore","doi":"10.1109/LAEDC54796.2022.9908203","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908203","url":null,"abstract":"Flexible sensing surfaces are the next frontier in large area electronics. Integrating sensors and electronics on flexible substrates it is possible to create surfaces that are capable of mapping the distribution of several quantities of practical interest: from pressure to X-rays, and from biopotentials to the infrared radiation generated by warm objects. In this paper we overview the main approaches and challenges in this field of research, focusing especially on solutions manufactured using organic materials.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124034213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Electrostatic Compact Model for Experimental Memristive Devices 实验忆阻器件的静电紧凑模型
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907768
Jesús Jiménez-León, A. Sarmiento-Reyes, P. Rosales-Quintero
{"title":"An Electrostatic Compact Model for Experimental Memristive Devices","authors":"Jesús Jiménez-León, A. Sarmiento-Reyes, P. Rosales-Quintero","doi":"10.1109/LAEDC54796.2022.9907768","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9907768","url":null,"abstract":"A compact model for a TiO2–based resistive switching device is presented. An electrostatic model is used to describe the inner conductive filament as two equivalent conductances in series connection. Analytical expressions for the experimental conductance and current of the device are obtained, and the memristive system that describes their behavior is formulated. The resulting curves of the model show good agreement, i.e. 87.44% of similarity, when compared to the experimental.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127917672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling Self-Heating Effects in Nanometer SOI Devices at Cryogenic Temperatures 低温下纳米SOI器件的自热效应建模
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908207
J. Méndez-V., D. Vasileska, K. Raleva, E. A. Gutiérrez
{"title":"Modeling Self-Heating Effects in Nanometer SOI Devices at Cryogenic Temperatures","authors":"J. Méndez-V., D. Vasileska, K. Raleva, E. A. Gutiérrez","doi":"10.1109/LAEDC54796.2022.9908207","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908207","url":null,"abstract":"Self-heating effects are important at cryogenic temperatures. For that purpose an electro-thermal solver for a range of temperatures is proposed and developed. According to our knowledge, this is the first simulator able to simulate self-heating effects in nanoscale SOI devices at low temperatures.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131127360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
FAST3: Front-End Electronics to Read Out Thin Ultra-Fast Silicon Detectors for ps Resolution FAST3:前端电子读出超薄超快速硅探测器ps分辨率
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908192
A. Rojas, N. Cartiglia, R. Arcidiacono, M. Ferrero, V. Sola, F. Siviero, L. Menzio
{"title":"FAST3: Front-End Electronics to Read Out Thin Ultra-Fast Silicon Detectors for ps Resolution","authors":"A. Rojas, N. Cartiglia, R. Arcidiacono, M. Ferrero, V. Sola, F. Siviero, L. Menzio","doi":"10.1109/LAEDC54796.2022.9908192","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908192","url":null,"abstract":"This paper presents a new version of the FAST family of ASICs and its comparison with the previous version. The new design, FAST3, aims at a timing jitter below 15 picoseconds when coupled to Ultra-Fast Silicon detectors (UFSD). The FAST3 integrated circuit is designed in standard 110 nm CMOS technology; it comes in two different versions: the amplifier-comparator version comprises 20 readout channels, while the amplifier-only version 16 channels. The ASIC power rail is at +1.2 V, and the power consumption for the front-end stage is 2.4 mW/ch and about 5 mW/ch for the output driver. In our tests, the FAST2 ASIC, coupled to a UFDS with a capacitance of 3.4 pF, achieves timing jitters of about 25 ps at an input charge of about 15 fC, while the simulation indicates that the FAST3 jitter will be about 15 ps at the same charge. Furthermore, FAST3 enhances its dynamic range up to 55 fC compared to the 15 fC of FAST2.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124415494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling Alloy Clustering Limited Low-Field Electron Mobility in GaN FinFETs 模拟氮化镓finfet中合金簇化限制的低场电子迁移率
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908185
V. Kumar, D. Vasileska, M. Povolotskyi
{"title":"Modeling Alloy Clustering Limited Low-Field Electron Mobility in GaN FinFETs","authors":"V. Kumar, D. Vasileska, M. Povolotskyi","doi":"10.1109/LAEDC54796.2022.9908185","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908185","url":null,"abstract":"In the last few years, GaN FinFETs are being considered as promising candidates for lower voltage applications over conventional HEMT devices. At the same time, GaN-based devices can operate in very low temperature environments that are relevant for superconducting and quantum computing applications. For example, due to its polarization-induced doping, GaN can overcome the carrier freeze-out challenges of other technologies such as doped silicon. This technology is not without problems, however. Structural inhomogeneity at the AlGaN/GaN hetero-interface, such as alloy clustering, becomes significant as the FinFET dimensions decrease. In this work, scattering rate due to alloy clustering is derived for Quasi-1D systems and added as an additional scattering mechanism in the in-house Monte Carlo transport kernel. Our simulation results show that alloy clustering limiting mobility is significant at lower temperatures. Therefore, any cryogenic analysis of GaN FinFETs must include the impact of alloy clustering.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121637374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of Oxide Thickness Fluctuation for Resist- and Spacer-Defined FinFETs 氧化物厚度波动对电阻和间隔定义finfet的影响
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908194
R. Rathore, A. Rana, V. Srivastava
{"title":"Impact of Oxide Thickness Fluctuation for Resist- and Spacer-Defined FinFETs","authors":"R. Rathore, A. Rana, V. Srivastava","doi":"10.1109/LAEDC54796.2022.9908194","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908194","url":null,"abstract":"The geometrical fluctuations such as Oxide Thickness Fluctuations (OTF) and Line Edge Roughness (LER) cause intrinsic statistical variations in the nanoscale FinFET technology. The OTF is primarily caused at a semiconductor/insulator (i.e., Si/SiO2) interface by random roughness of the gate oxide layer. This research work analyzes the effect of oxide roughness on the performance parameters of resistand spacer-defined FinFETs. A large statistical ensemble has been considered to observe the effect of OTF for FinFET devices. Further, all results have been analyzed and compared with the ideal (i.e., rectangular) FinFET. These results reveal that intrinsic parameter fluctuations introduced by OTF become significant for resist-defined FinFET structures. In addition, physical insight for variability-resistant FinFET design has been realized.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123933382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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