用于表征变异性和老化研究的专用集成电路及其在轻量级安全应用中的应用:特邀论文

J. Diaz-Fortuny, P. Saraza-Canflanca, M. Vandemaele, E. Bury, R. Degraeve, B. Kaczer
{"title":"用于表征变异性和老化研究的专用集成电路及其在轻量级安全应用中的应用:特邀论文","authors":"J. Diaz-Fortuny, P. Saraza-Canflanca, M. Vandemaele, E. Bury, R. Degraeve, B. Kaczer","doi":"10.1109/LAEDC54796.2022.9908187","DOIUrl":null,"url":null,"abstract":"With today’s rapid development of novel and advanced technology nodes, transistor degradation phenomena like BTI and HCI are evolving to an even more serious concern for analog and digital circuit designers. Besides, time-dependent variability effects like TDDB and transient effects like RTN, which can cause significant performance deviations or even a total circuit failure, can alternatively be used for security applications such as physical unclonable functions. In this context, it is fundamental to accurately model variability and degradation which requires elaborate statistical characterization of these phenomena. To avoid the long testing times that such characterization would otherwise imply, the test circuits should allow the parallelization of stress application. This paper presents a test framework based on the utilization of transistor and circuit arrays that allows the time-efficient testing of degradation phenomena.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dedicated ICs for the Characterization of Variability and Aging Studies and their Use in Lightweight Security Applications : Invited paper\",\"authors\":\"J. Diaz-Fortuny, P. Saraza-Canflanca, M. Vandemaele, E. Bury, R. Degraeve, B. Kaczer\",\"doi\":\"10.1109/LAEDC54796.2022.9908187\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With today’s rapid development of novel and advanced technology nodes, transistor degradation phenomena like BTI and HCI are evolving to an even more serious concern for analog and digital circuit designers. Besides, time-dependent variability effects like TDDB and transient effects like RTN, which can cause significant performance deviations or even a total circuit failure, can alternatively be used for security applications such as physical unclonable functions. In this context, it is fundamental to accurately model variability and degradation which requires elaborate statistical characterization of these phenomena. To avoid the long testing times that such characterization would otherwise imply, the test circuits should allow the parallelization of stress application. This paper presents a test framework based on the utilization of transistor and circuit arrays that allows the time-efficient testing of degradation phenomena.\",\"PeriodicalId\":276855,\"journal\":{\"name\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Latin American Electron Devices Conference (LAEDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LAEDC54796.2022.9908187\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LAEDC54796.2022.9908187","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

随着当今新型和先进技术节点的快速发展,晶体管退化现象,如BTI和HCI,正在演变为模拟和数字电路设计人员更加严重的关注。此外,时间相关的可变性效应(如TDDB)和瞬态效应(如RTN)可能导致显著的性能偏差,甚至导致整个电路故障,它们可以替代地用于物理不可克隆功能等安全应用程序。在这方面,准确地模拟变异性和退化是至关重要的,这需要对这些现象进行详细的统计表征。为了避免这种特性所暗示的长时间测试,测试电路应该允许应力应用的并行化。本文提出了一种基于晶体管和电路阵列的测试框架,可以对退化现象进行实时有效的测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dedicated ICs for the Characterization of Variability and Aging Studies and their Use in Lightweight Security Applications : Invited paper
With today’s rapid development of novel and advanced technology nodes, transistor degradation phenomena like BTI and HCI are evolving to an even more serious concern for analog and digital circuit designers. Besides, time-dependent variability effects like TDDB and transient effects like RTN, which can cause significant performance deviations or even a total circuit failure, can alternatively be used for security applications such as physical unclonable functions. In this context, it is fundamental to accurately model variability and degradation which requires elaborate statistical characterization of these phenomena. To avoid the long testing times that such characterization would otherwise imply, the test circuits should allow the parallelization of stress application. This paper presents a test framework based on the utilization of transistor and circuit arrays that allows the time-efficient testing of degradation phenomena.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信