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RF printed electronic devices using bio-sourced materials: risks and opportunities 使用生物源材料的射频印刷电子器件:风险和机遇
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908189
P. Xavier, T. Vuong
{"title":"RF printed electronic devices using bio-sourced materials: risks and opportunities","authors":"P. Xavier, T. Vuong","doi":"10.1109/LAEDC54796.2022.9908189","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908189","url":null,"abstract":"Like other sciences and technologies, electronics today faces an enormous challenge due to the scarcity of non-renewable resources and the need to decrease greenhouse gas emissions in order to reduce the climate change. In this context, the search for alternative roadmaps at all stages of the life cycle of an electronic product is a major issue. Additive processes, bio-sourced or organic materials and recyclable substrates are examples of subjects that can be explored to progressively substitute high impacts materials and methods by eco-friendly ones. At the same time, these solutions have a number of shortcomings that must be overcome in order for them to become economically and technically credible. In the domain of radio frequency devices, paper printed antennas and filters, electromagnetic energy harvesting systems, sensors and displays can be designed. This article presents an overview of what has been undertaken in this field by our team for over ten years for the design, fabrication and test of antennas. These devices were tested in several real environments for different applications such as anti-counterfeiting.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127534036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of a-SiGe:H Thin Film Transistors with HfO2 as gate insulator by TCAD simulations 以HfO2为栅极绝缘体的a-SiGe:H薄膜晶体管的TCAD仿真优化
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908238
S. Salas-Rodríguez, J. Martínez-Castillo, J. Molina-Reyes
{"title":"Optimization of a-SiGe:H Thin Film Transistors with HfO2 as gate insulator by TCAD simulations","authors":"S. Salas-Rodríguez, J. Martínez-Castillo, J. Molina-Reyes","doi":"10.1109/LAEDC54796.2022.9908238","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908238","url":null,"abstract":"This paper presents the study and improvement of main electrical parameters of a-SiGe:H Thin Film Transistors (TFTs) such as subthreshold slope, threshold voltage, ION/IOFF ratio and effective mobility, by using different techniques such as selecting the architecture with better performance, by applying a planarization method to gate electrode by lift-off process in order to reduce steps between drain/source electrodes and the active layer, by studying the effect of gate oxide thickness over the electrical parameters, and incorporating hafnium oxide (HfO2) as high k gate insulator. Simulated results show that the best architecture is the staggered bottom gate planarized with a gate oxide thickness of 10 nm for SiO2 or 50 nm for HfO2.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115554851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs 非对称自级联码与梯度通道SOI nmosfet的跨电容比较分析
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9907771
C. Alves, L. d'Oliveira, M. de Souza
{"title":"Comparative Analysis of Transcapacitances in Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs","authors":"C. Alves, L. d'Oliveira, M. de Souza","doi":"10.1109/LAEDC54796.2022.9907771","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9907771","url":null,"abstract":"This work presents a comparative study of the transcapacitances of asymmetric self-cascode (A-SC) and graded-channel (GC) silicon-on-insulator (SOI) nMOSFETs, by means of two-dimensional numerical simulations. Simulated results show that the gate-to-drain capacitance is smaller for the ASC SOI device if compared to the GC SOI device, despite of the applied VDS.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124081859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy 由自旋轨道转矩和压控磁各向异性决定的磁隧道结开关能量
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908222
R. L. de Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov
{"title":"About the Switching Energy of a Magnetic Tunnel Junction determined by Spin-Orbit Torque and Voltage-Controlled Magnetic Anisotropy","authors":"R. L. de Orio, J. Ender, S. Fiorentini, W. Goes, S. Selberherr, V. Sverdlov","doi":"10.1109/LAEDC54796.2022.9908222","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908222","url":null,"abstract":"We demonstrate the switching of a three-terminal magnetoresistive random access memory cell based on spin-orbit torque with the support of voltage control of magnetic anisotropy and spin-transfer torque. It is shown that the critical current for switching can be reduced by about 40% due to the reduction of the magnetic anisotropy caused by a voltage applied through the magnetic tunnel junction. This leads to a reduction of 64% of the energy consumed for the input spin-orbit bias. However, it is also demonstrated that the current flowing through the magnetic tunnel junction is an additional source of energy dissipation. Therefore, a compromise between both components to minimize the total energy consumption is found. Moreover, we propose a switching energy-time product as a figure of merit for the efficiency of the switching scheme.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128011340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Challenges to measure RF noise and intermodulation performances of mmW/THz devices 测量毫米波/太赫兹器件的射频噪声和互调性能的挑战
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908208
F. Danneville, H. Ghanem, J. A. Gonçalves, Sylvie Lepilliez, D. Gloria, G. Ducournau
{"title":"Challenges to measure RF noise and intermodulation performances of mmW/THz devices","authors":"F. Danneville, H. Ghanem, J. A. Gonçalves, Sylvie Lepilliez, D. Gloria, G. Ducournau","doi":"10.1109/LAEDC54796.2022.9908208","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908208","url":null,"abstract":"Applications in millimetre wave range and terahertz frequencies keep on increasing. In this context, drastic challenges are faced at measurement level, in particular to extract noise performance and nonlinear properties of devices and circuits used to build the required systems. The aim of this talk is to provide an overview of these challenges, and to describe the solutions that we have developed to respond to them.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"124 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134271126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption 氢化非晶硅锗薄膜中掺杂氮(a-SiGe:H,N)提高了长波红外(LWIR)区域的吸收
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908191
Oscar Velandia, M. Moreno, Ricardo Zavala, A. Morales, A. Torres, C. Zuniga, P. Rosales, Luis Hernández, N. Carlos
{"title":"Hydrogenated amorphous silicon germanium films doped with nitrogen (a-SiGe:H,N) to improve the long-wave infrared (LWIR) region absorption","authors":"Oscar Velandia, M. Moreno, Ricardo Zavala, A. Morales, A. Torres, C. Zuniga, P. Rosales, Luis Hernández, N. Carlos","doi":"10.1109/LAEDC54796.2022.9908191","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908191","url":null,"abstract":"Sensors in the long-wave IR region are used due to their enormous importance in technology for a variety of applications, as medical diagnostics, fire protection, automotive night vision, security and military, among others. This paper reports our study of hydrogenated amorphous silicon-germanium (a-SiGe:H) thin films deposited by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD), in order to be used as long-wave infrared (LWIR) sensing films in microbolometers. In order to improve the absorbance of the IR sensing films, they were doped with nitrogen (N2) using different flow rates. FTIR measurements were performed to compare the absorption coefficient of the films doped with different N2 flow rates, where was observed that effectively, the absorption in the 8 – 14 μm spectral range was improved for the films deposited with larger N2 flow rates. Also, it was observed that the incorporation of N2 in the a-SiGe:H films improves the room temperature conductivity (σRT) up to 3 orders of magnitude.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122001817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and construction of a Low-Noise L-Band Amplifier for the Tulancingo I radio Telescope 图兰辛哥1号射电望远镜l波段低噪声放大器的设计与构造
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908176
E. Ibarra-Medel, M. Velázquez, D. Ferrusca, S. Kurtz
{"title":"Design and construction of a Low-Noise L-Band Amplifier for the Tulancingo I radio Telescope","authors":"E. Ibarra-Medel, M. Velázquez, D. Ferrusca, S. Kurtz","doi":"10.1109/LAEDC54796.2022.9908176","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908176","url":null,"abstract":"The total noise produced by a microwave receiver is dominated by the low-noise amplifier (LNA), which is usually the first active device in the receiver detection chain. The LNA is coupled as closely as possible to the feedhorn antenna and should have as low a noise figure as possible. In this work, we present the design and construction of a LNA to be implemented in an L-band receiver to be installed on the Tulancingo I antenna as a part of its conversion to an astronomical radio telescope. The LNA bandwidth is from 1.4 to 1.8 GHz, with 26 dB gain and 50 K noise temperature.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124064530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Test structures for ZT thin-film thermoelectric characterization using laser as heat source 激光作为热源的ZT薄膜热电特性测试结构
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908237
I. E. Zapata-De Santiago, A. Torres
{"title":"Test structures for ZT thin-film thermoelectric characterization using laser as heat source","authors":"I. E. Zapata-De Santiago, A. Torres","doi":"10.1109/LAEDC54796.2022.9908237","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908237","url":null,"abstract":"In order to improve characterization of thin film thermoelectric materials, a-SixGe1–x:H thin films were deposited by PECVD adjusting temperature, pressure, gas flux and gas ratio. The resulting material has been electrically and thermoelectrically characterized with the TERM-PRU-MA1 microchip, designed for this purpose. A simple method for thermoelectric characterization using a laser as a heat source is proposed. The microchip structures include Schottky diodes made by the union of the thermoelectric material and a metal. One of the proposed applications for the diodes, is using them as micro thermometers. Operated with a constant forward current, Schottky diodes show a very nearly linear relationship between their temperature and the current across them. The thermoelectric test structures were heated controlling the power and pulse of a green laser, using an optical setup. Thermic conductivity and the Seebeck coefficient obtained by this characterization method are similar to the ones obtained with other conventional but more complex methods.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125112082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a UAV system for estimation of structure from movement for a random target 无人机随机目标运动结构估计系统的研制
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908180
Roberto Pereira-Santos, L. Chavarría-Zamora
{"title":"Development of a UAV system for estimation of structure from movement for a random target","authors":"Roberto Pereira-Santos, L. Chavarría-Zamora","doi":"10.1109/LAEDC54796.2022.9908180","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908180","url":null,"abstract":"This paper describes a solution to automate the 3D model of an arbitrary object using an embedded UAV system through its movement and an image sensor to take pictures of an arbitrary static target, which is located with a trajectory algorithm that allows the quadcopter to travel, photograph and come back. Then, the images are sent to a server, stored in a computer to run the photogrammetry process, and finally create the three-dimensional object without human intervention. It’s important to mention that the algorithm parameters are set through an application that obtains the object’s height, coordinates, size, and other parameters. Also, this kind of UAV device costs around 200 dollars, and an application could control it, or if it’s open-source, It could be configured by some programming language. This UAV system can be beneficial in different disciplinary fields, such as agriculture, construction, surveying, inventory control, surveillance, geology, biology, and other applications.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127633922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependency of Current Generated Upon Thermal Treatment Duration in Non-fullerene Organic Solar Cells 非富勒烯有机太阳能电池产生的电流与热处理时间的关系
2022 IEEE Latin American Electron Devices Conference (LAEDC) Pub Date : 2022-07-04 DOI: 10.1109/LAEDC54796.2022.9908224
E. Moustafa, J. Pallarès, L. Marsal
{"title":"Dependency of Current Generated Upon Thermal Treatment Duration in Non-fullerene Organic Solar Cells","authors":"E. Moustafa, J. Pallarès, L. Marsal","doi":"10.1109/LAEDC54796.2022.9908224","DOIUrl":"https://doi.org/10.1109/LAEDC54796.2022.9908224","url":null,"abstract":"In the present work, inverted structure of organic solar cells (OSCs) based on PM6 (donor): Y7 (non-fullerene acceptor-NF) were fabricated with architecture of ITO/ZnO/PM6:Y7/V2O5/Ag. We investigated the effect of chloronapthelene (CN) and diiodo octane (DIO) solvents additive along with thermal annealing duration on the performance of the fabricated NF-OSCs. We found that, as the annealing duration of the active blend increased, the performance of the fabricated devices enhanced. Furthermore, the obtained results showed that the significant improvement was obtained for the treated devices at 100 °C for 60 min, using 2 % CN additives which achieved efficiency of 13.62 %. Where the power conversion efficiency (PCE) and the generated current density (JSC) were improved by 2 % and 12 %, respectively for the devices treated for 30 min, while the PCE and JSC were further enhanced by 10 % and 16 %, respectively for the same mentioned devices that thermally annealed for 60 min.","PeriodicalId":276855,"journal":{"name":"2022 IEEE Latin American Electron Devices Conference (LAEDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-07-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134175531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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